Regular Perturbation Method for Studying the Subthreshold Characteristics of Short Channel SOI MOSFETs

JIN Lin; GAO Shan; CHEN Jun-ning; CHU Lei-lei

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Regular Perturbation Method for Studying the Subthreshold Characteristics of Short Channel SOI MOSFETs

更新时间：2026-09-04

- Regular Perturbation Method for Studying the Subthreshold Characteristics of Short Channel SOI MOSFETs
- Vol. 27, Issue 4, Pages: 13-16(2010)
- 作者机构：
  
  安徽大学电子科学与技术学院,安徽,合肥,230039
- 作者简介：
- 基金信息：
- DOI：
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- Published：2010
- 稿件说明：
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金林, 高珊, 陈军宁, 褚蕾蕾. 基于摄动法研究短沟道SOI MOSFET亚阈值特性[J]. 微电子学与计算机, 2010, 27(4): 13-16.

JIN Lin, GAO Shan, CHEN Jun-ning, et al. Regular Perturbation Method for Studying the Subthreshold Characteristics of Short Channel SOI MOSFETs[J]. 2010, 27(4): 13-16.
金林, 高珊, 陈军宁, 褚蕾蕾. 基于摄动法研究短沟道SOI MOSFET亚阈值特性[J]. 微电子学与计算机, 2010, 27(4): 13-16. DOI：

JIN Lin, GAO Shan, CHEN Jun-ning, et al. Regular Perturbation Method for Studying the Subthreshold Characteristics of Short Channel SOI MOSFETs[J]. 2010, 27(4): 13-16. DOI：

摘要

提出了一种新的方法对短沟道SOI MOSFETs亚阈区的二维表面势的解析模型进行了改进

即摄动法.由于在短沟道SOI MOSFETs中不仅需要计及不可动的电离杂质

而且需要考虑自由载流子的数量和分布的影响.利用摄动法求解非线性泊松方程可以得到短沟道SOI MOSFETs二维的表面势解析模型.通过与二维数值模拟器MEDICI模拟结果比较

证明了在亚阈区改进模型所得的结果比只计及不可动的电离杂质的SOI MOSFETs模型所得的结果吻合更好.

Abstract

A new method for studying the subthreshold characteristics of SOI MOSFETs is presented

which is called regular perturbation method.When the characeristics of SOI MOSFETs is being analyzed

we should consider not only the effect of the ionization impurity

but also the effect of the number and distributing of carriers. The analytical model of the SOI MOSFETss surface voltage can be obtained by solving non-linear Possion equation with the “regular perturbation method”. The result of the model are verified with the numerical simulation.It can be concluded that the new model is better than the old model which only take account for the effect of the ionization impurity.

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