Design and Implementation of an Wideband VCO with an High-speed Dual-mode Prescaler

LAN Xiao-ming; YAN Jun; MA He-ping; SHI Yin

Chinese

您当前的位置：

首页 >

文章列表页 >

Design and Implementation of an Wideband VCO with an High-speed Dual-mode Prescaler

更新时间：2026-09-04

- Design and Implementation of an Wideband VCO with an High-speed Dual-mode Prescaler
- Vol. 27, Issue 2, Pages: 45-48(2010)
- 作者机构：
  
  中国科学院半导体研究所机构,北京,100083
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2010
- 稿件说明：
移动端阅览
兰晓明, 颜峻, 马何平, 石寅. 一种宽频压控振荡器及高速双模预分频器的设计与实现[J]. 微电子学与计算机, 2010, 27(2): 45-48,54.

LAN Xiao-ming, YAN Jun, MA He-ping, et al. Design and Implementation of an Wideband VCO with an High-speed Dual-mode Prescaler[J]. 2010, 27(2): 45-48.
兰晓明, 颜峻, 马何平, 石寅. 一种宽频压控振荡器及高速双模预分频器的设计与实现[J]. 微电子学与计算机, 2010, 27(2): 45-48,54. DOI：

LAN Xiao-ming, YAN Jun, MA He-ping, et al. Design and Implementation of an Wideband VCO with an High-speed Dual-mode Prescaler[J]. 2010, 27(2): 45-48. DOI：

摘要

针对射频无线收发机的需求

利用开关电容阵列和多个VCO核的结构设计了一个分段线性超宽频压控振荡器 (VCO) .采用全电流模逻辑 (CML) 结构的双模预分频器能满足振荡器最高频率输出的要求.基于IBM0.35SiGe BiCMOS工艺的流片测试结果表明

电源电压为2.8V时

该压控振荡器的频率能够覆盖2.75~5.73GHz的频段

调频灵敏度约为100MHz/V

在偏离中心频率1MHz处

单边带相位噪声最佳值达到了-120.32dBc/Hz

预分频器后仿最高工作频率达9.6GHz

两部分核心总工作电流为10mA.

Abstract

Aimed at the requirements of RF wireless transceiver

a wideband piecewise linear VCO is designed based on the combination of switching-capacitance and multi-VCO cores.The dual-mode prescaler utilizing full current mode logic is able to operate at the highest VCO frequency.Implemented in the IBM 0.35SiGe BiCMOS process

the VCO frequency ranges between 2.75~5.73GHz with an average tuning gain of 100MHz/V.The best measured SSB phase noise is 120.32dBc/Hz at 1MHz offset from the carrier

the prescaler post simulated frequency is up to 9.6GHz.The two parts draws 10mA current from a 2.8V supply.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Design of a 5.8 GHz Fully Integrated LC VCO with DigitalControlled Capacitor Array

Analysis and Design of 60GHz VCO Using 0.18μm SiGe BiCMOS Technology

A high-efficiency charge pump for ultra-low voltage boost systems

Simulation on the DC characteristics of double heterojunction p-GaN HEMT with AlN/GaN hybrid buffer layer

Aerial vehicle detection algorithm based on multi-scale fusion and small-object enhancement

Related Author

CHEN Lian-lian

SUN Ling

WANG Dong

WU Yu-ping

CHEN Lan

Related Institution

Jiangsu Key Laboratory of ASIC Design, Nantong University

Institute of Microelectronics, Chinese Academy of Sciences

AI问答

Postal code：100079
Tel：（010）53879206 Email：tmw@bjxintong.com.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09082226号-64 京公网安备11010602201714号
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰