Particle-Injected Model Based on Weibull Function

WANG Pei; LI Lei

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Particle-Injected Model Based on Weibull Function

更新时间：2026-09-04

- Particle-Injected Model Based on Weibull Function
- Vol. 27, Issue 9, Pages: 61-64(2010)
- 作者机构：
  
  电子科技大学电子科学技术研究院,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2010
- 稿件说明：
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王佩, 李磊. 一种基于Weibull函数的单粒子注入脉冲模型[J]. 微电子学与计算机, 2010, 27(9): 61-64.

WANG Pei, LI Lei. Particle-Injected Model Based on Weibull Function[J]. 2010, 27(9): 61-64.
王佩, 李磊. 一种基于Weibull函数的单粒子注入脉冲模型[J]. 微电子学与计算机, 2010, 27(9): 61-64. DOI：

WANG Pei, LI Lei. Particle-Injected Model Based on Weibull Function[J]. 2010, 27(9): 61-64. DOI：

摘要

单粒子效应是当前集成电路抗辐射加固的研究重点之一.根据空间辐射粒子特点

提出一种基于Weibull函数的单粒子注入脉冲模型

该模型利用Weibull函数对瞬时脉冲直接进行电路级描述.实验证明

该模型与传统器件级电流注入脉冲模型的SER统计数据拟合度高达98.41%

同时可将电路模拟时间缩短3个数量级

在高速超大规模集成电路的单粒子效应研究中

具有明显的模拟速度优势

为深亚微米级的抗辐射加固研究提供了坚实的理论基础.

Abstract

Single-Event Effect(SEE)is a hot research area in Integrate Circuits radiation hardening today.This paper put forward a particle-injected model based on Weibull function which characterized transient pulse directly.The experiment result proved that the precision of Weibull model come up to 98.41%compare with the current-pulse model

and it can improve simulation computer speed of circuits 3 orders.The model proposed in this paper has strong referenced value to study radiation hardened in VLSI circuits.

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