The Simulation Method Based on SPICE for Radiation-Hardening Design in Deep Submicron Technology

WANG Dan; YUE Su-ge; SUN Yong-shu

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The Simulation Method Based on SPICE for Radiation-Hardening Design in Deep Submicron Technology

更新时间：2026-09-04

- The Simulation Method Based on SPICE for Radiation-Hardening Design in Deep Submicron Technology
- Vol. 27, Issue 6, Pages: 80-84(2010)
- 作者机构：
  
  北京微电子技术研究所机构,北京,100074
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2010
- 稿件说明：
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王丹, 岳素格, 孙永姝. 深亚微米抗辐射加固设计的SPICE仿真验证方法[J]. 微电子学与计算机, 2010, 27(6): 80-84.

WANG Dan, YUE Su-ge, SUN Yong-shu. The Simulation Method Based on SPICE for Radiation-Hardening Design in Deep Submicron Technology[J]. 2010, 27(6): 80-84.
王丹, 岳素格, 孙永姝. 深亚微米抗辐射加固设计的SPICE仿真验证方法[J]. 微电子学与计算机, 2010, 27(6): 80-84. DOI：

WANG Dan, YUE Su-ge, SUN Yong-shu. The Simulation Method Based on SPICE for Radiation-Hardening Design in Deep Submicron Technology[J]. 2010, 27(6): 80-84. DOI：

摘要

由于在抗辐射加固设计(RHBD)中采用了环形栅的版图结构

由此引发了直栅SPICE仿真验证方法对RHBD不适用的问题.通过分析深亚微米工艺技术下环形栅结构的特性

建立了环形栅的有效栅宽长比算法

同时构建了环形栅的SPICE仿真模型

并针对抗辐射加固设计提出了如何有效地提取版图参数网表的策略

从而解决了传统SPICE仿真验证对RHBD不适用的问题

通过有效的仿真验证

确保电路性能

提高设计的可靠性.

Abstract

For using enclosed-gate layout MOSFETs in rad-hard by design

because the annular structure is different from ordinary rectangular gate essentially

so the conventional SPICE simulations is not-applicable to radiation-hardening design.In this paper

analyzing the characteristic of enclosed-gate in deep submicron technology

this thesis establishs s an effective aspect ratio arithmetic and buildes SPICE model for enclosed-gate

at the same time

a method about how to extract layout netlist availability is presented here

the three points mentioned above expound the simulation method of radiation-hardening design in deep submicron technology

which resolved the unapplicability between SPICE and RHBD traditionally.Throuth effective simulation

the circuit performance is ensured and reliability in the design is increased.

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