Design of a High Accuracy CMOS Voltage Reference with Low Cost

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Design of a High Accuracy CMOS Voltage Reference with Low Cost

更新时间：2026-09-04

- Design of a High Accuracy CMOS Voltage Reference with Low Cost
- Vol. 27, Issue 5, Pages: 121-124(2010)
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- Published：2010
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一种低成本高精度CMOS基准电压源设计[J]. 微电子学与计算机, 2010, 27(5): 121-124.

Design of a High Accuracy CMOS Voltage Reference with Low Cost[J]. 2010, 27(5): 121-124.
一种低成本高精度CMOS基准电压源设计[J]. 微电子学与计算机, 2010, 27(5): 121-124. DOI：

Design of a High Accuracy CMOS Voltage Reference with Low Cost[J]. 2010, 27(5): 121-124. DOI：

摘要

利用电子迁移率和MOS管阈值电压对温度的变化呈反向趋势的原理

基于0.13μm标准CMOS工艺

设计实现了一款非带隙的基准源电路.Hspice仿真显示该基准能提供0.715V基准输出

并可以根据需要在0.4V~1V范围内进行调节.在-25℃~125℃范围内

温度系数为21.6ppm

在25℃时输出基准线性度为0.237%.

Abstract

In this paper a non-bandgap voltage reference was designed in a standard 0.13μm CMOS technology

based on element that electron mobility and threshold voltage have opposite temperature coefficients. The simulation results using by Hspice show that the output of proposed voltage reference is 0.715V and it can be adjusted from 0.4V to 1V. Within the temperature range from -25 ℃ to 125 ℃

a temperature coefficient of 21.6 ppm/ ℃ is achieved

and the line regulation at 25 ℃ is 0.237%/V.

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