The gate of a dual-material-gate (DMG) MOSFET consists of two materials contacting laterally with different wok functions.The novel device could increase carrier transport speed through the channel considerably

and suppress threshold voltage roll-off.The hot carrier effect (HCE) of the novel device were studied as compared with the conventional MOSFET for the first time systemically.Using two-dimensional device simulator MEDICI

we simulate some parameter which can surveillance the hot carrier effect efficiently

such as electric field、substrate current and gate current et al.The simulation results have been compared with the conventional MOSFET.It is clear that DMG MOSFET has better performance.