Modeling of the Threshold Voltage for OISD MOSFET and its Structure Design

GAO Shan; MENG Jian; CHEN Jun-ning; KE Dao-ming

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Modeling of the Threshold Voltage for OISD MOSFET and its Structure Design

更新时间：2026-09-04

- Modeling of the Threshold Voltage for OISD MOSFET and its Structure Design
- Vol. 27, Issue 7, Pages: 242-245(2010)
- 作者机构：
  
  安徽大学电子科学与技术学院,安徽,合肥,230039
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2010
- 稿件说明：
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高珊, 孟坚, 陈军宁, 柯导明. OISD MOSFET阈值电压建模与结构设计[J]. 微电子学与计算机, 2010, 27(7): 242-245,249.

GAO Shan, MENG Jian, CHEN Jun-ning, et al. Modeling of the Threshold Voltage for OISD MOSFET and its Structure Design[J]. 2010, 27(7): 242-245.
高珊, 孟坚, 陈军宁, 柯导明. OISD MOSFET阈值电压建模与结构设计[J]. 微电子学与计算机, 2010, 27(7): 242-245,249. DOI：

GAO Shan, MENG Jian, CHEN Jun-ning, et al. Modeling of the Threshold Voltage for OISD MOSFET and its Structure Design[J]. 2010, 27(7): 242-245. DOI：

摘要

对一种新型半绝缘SOIMOS器件的阈值电压进行建模

该器件采用源漏注氧OISD技术

具有优良的自加热效应抑制能力和耐压特性.由于沟道中存在复杂的二维势场分布

OISD MOSFET阈值电压

亚阈值斜率及短沟道效应均受到硅窗口尺寸的调制.给出了一个基于数值仿真的OISD MOSFET阈值电压简单模型

该模型可指导器件结构设计

并通过MEDICI二维数值仿真进行验证.最后

对OISD MOSFET亚阈值斜率、短沟道阈值电压偏移以及DIBL因子等重要电学参量进行详细的研究.

Abstract

A semi-SOI MOSFET produced by drain/source oxygen implantation can suppress self-heating effect and improve breakdown voltage. However owing to the complicated 2-D electric field distribution

the threshold voltage

the sub-threshold slope and the SCEs (short channel effects) of OISD MOSFET are modulated by the size of the silicon window. A compact threshold voltage model based on 2-D numerical simulation was provided for OISD MOST design. At last the threshold voltage model was verified and several other important electrical parameters

including sub-threshold slope

DIBL factor and SCEs

were analyzed in details with the help of MEDICI 2D simulator.

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Related Author

TIAN Jing-hui

HUANG Qi-yu

Related Institution

1 School of Microelectronics,Shanghai Jiaotong University

2 Semiconductor Manufacturing International Corporation

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