Research on Breakdown Mechanism of LDMOS with Step Shallow Trench Isolation in the Drift Region

CHEN Wen-lan; SUN Xiao-hong; HU Shan-wen; CHEN Qiang; GAO Huai

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Research on Breakdown Mechanism of LDMOS with Step Shallow Trench Isolation in the Drift Region

更新时间：2026-09-04

- Research on Breakdown Mechanism of LDMOS with Step Shallow Trench Isolation in the Drift Region
- Vol. 28, Issue 2, Pages: 56-60(2011)
- 作者机构：
  
  1. 1 东南大学苏州研究院高频高功率器件与集成技术研究中心,江苏,苏州,215123
  2. 2 东南大学国家ASIC系统工程技术研究中心,江苏,南京,210096
  3. 3 瑞典皇家工学院电子系统系,斯德哥尔摩,16440
- 作者简介：
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- Published：2011
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陈文兰, 孙晓红, 胡善文, 陈强, 高怀. 阶梯浅沟槽隔离结构LDMOS耐压机理的研究[J]. 微电子学与计算机, 2011, 28(2): 56-60.

CHEN Wen-lan, SUN Xiao-hong, HU Shan-wen, et al. Research on Breakdown Mechanism of LDMOS with Step Shallow Trench Isolation in the Drift Region[J]. 2011, 28(2): 56-60.
陈文兰, 孙晓红, 胡善文, 陈强, 高怀. 阶梯浅沟槽隔离结构LDMOS耐压机理的研究[J]. 微电子学与计算机, 2011, 28(2): 56-60. DOI：

CHEN Wen-lan, SUN Xiao-hong, HU Shan-wen, et al. Research on Breakdown Mechanism of LDMOS with Step Shallow Trench Isolation in the Drift Region[J]. 2011, 28(2): 56-60. DOI：

摘要

提出了一种具有阶梯浅沟槽隔离结构的LDMOS.阶梯浅沟槽结构增加了漂移区的有效长度

改善了表面电场及电流的分布

从而提高了器件的击穿电压.借助器件模拟软件Silvaco对沟槽深度、栅长及掺杂浓度等工艺参数进行了优化设计.结果表明

在保证器件面积不变的条件下

新结构较单层浅沟槽隔离结构LDMOS击穿电压提升36%以上

而导通电阻降低14%.

Abstract

A novel LDMOSFET with Step Shallow Trench Isolation(SSTI) in the drift region is proposed． With this design

the effective length of drift region is increased

and the surface electrical field becomes more uniformly distributed

resulting in a higher breakdown voltag e. The device trench depth

gate length and doping concentration are further optimized. In computer simulation

when compared with a Monolayer-STI LDMOS(MSTI-LDMOS) with the same area

the breakdown voltage of the new device is 36% higher

and has a 14% lower on-resistance.

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