A Fully Differential Operational Amplifier with Negative Resistance Gain Enhancement

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A Fully Differential Operational Amplifier with Negative Resistance Gain Enhancement

更新时间：2026-09-04

- A Fully Differential Operational Amplifier with Negative Resistance Gain Enhancement
- Vol. 28, Issue 2, Pages: 178-180(2011)
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- Published：2011
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一种基于负电阻增益增强型的全差分运算放大器[J]. 微电子学与计算机, 2011, 28(2): 178-180.

A Fully Differential Operational Amplifier with Negative Resistance Gain Enhancement[J]. 2011, 28(2): 178-180.
一种基于负电阻增益增强型的全差分运算放大器[J]. 微电子学与计算机, 2011, 28(2): 178-180. DOI：

A Fully Differential Operational Amplifier with Negative Resistance Gain Enhancement[J]. 2011, 28(2): 178-180. DOI：

摘要

设计了一种新颖的全差分的CMOS运算放大器.在全部晶体管都取最小沟道长度的情况下

层叠的负电阻晶体管结构来提高增益.在电源电压为2.5V

0.25 μm CMOS工艺条件下进行电路模拟.模拟结果表明

开环直流增益为86 dB

单位增益带宽为200 MHz

相位裕度为80°.

Abstract

A fully differential CMOS operational amplifier with the minimized channel length of alI transistors

and the negative resistance with cascode transistor is proposed to gain enhancement. The circuit has been designed to operate with 2.5V single supply and has been simulated in 0.25 μ CMOS process. Simulation results showed an effective open-loop DC gain of 86 dB

gain bandwidth of 200MHz and phase margin of 80°.

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