High Power Gain RF Power Amplifier Based on SiGe Technology

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High Power Gain RF Power Amplifier Based on SiGe Technology

更新时间：2026-09-04

- High Power Gain RF Power Amplifier Based on SiGe Technology
- Vol. 29, Issue 2, Pages: 18-21(2012)
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- Published：2012
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基于SiGe工艺的高增益射频功率放大器[J]. 微电子学与计算机, 2012, 29(2): 18-21.

High Power Gain RF Power Amplifier Based on SiGe Technology[J]. 2012, 29(2): 18-21.
基于SiGe工艺的高增益射频功率放大器[J]. 微电子学与计算机, 2012, 29(2): 18-21. DOI：

High Power Gain RF Power Amplifier Based on SiGe Technology[J]. 2012, 29(2): 18-21. DOI：

摘要

基于0.13μm SiGe HBT工艺

设计应用于无线局域网 (WLAN) 802.11b/g频段范围内的高增益射频功率放大器.该功放工作在AB类

由三级放大电路级联构成

并带有温度补偿和线性化的偏置电路.仿真结果显示:功率增益高达30dB

1dB压缩点输出功率为24dBm

电路的S参数S11在1.5~4GHz大的频率范围内均小于-17dB

S21大于30dB

输出匹配S22小于-10dB

S12小于-90dB.最高效率可达42.7%

1dB压缩点效率为37%.

Abstract

A high power gain RF power amplifier was designed for WLAN 802.11b/g based on 0.13μm SiGe HBT technology.The PA composed of three stage amplifiers worked in Class AB

with temperature compensation and linearing bias circuit.The simulation results showed that the power amplifier had a power gain of 30 dB

an output 1 dB compression point of 24 dBm

the S parameter of S11 less than-17 dB in a wide frequency range from 1.5 GHz to 4 GHz and the S21 more than 30 dB

the output match S22 less than-10 dB and the S12 less than-90 dB

a maximum power added efficiency (PAE) of 42.7% and the efficiency at 1 dB compression point is 37%.

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