A novel low-power low-voltage reference is developed utilizing △ between sub threshold MOSFETs.It is implemented in HJTC 180 nm standard CMOS process.The proposed voltage reference generates two different Vs which have negative temperature coefficients and combines them to produce an output voltage with a nearly zero temperature coefficient.The resulting reference voltage is 220 mV with the temperature coefficient 68×10/℃in the range of-25 ℃ to 100 ℃ The minimum supply voltage is 0.7 V and the simulated line regularity is 1.5 mV/ V with the supply range from 0.7~4 V.The PSRR is-56dB at 1 kHz and the power consumption is 3.7μW under 1.0 V at 300 K.The entire chip core area with the start up circuit is 0.02 mm.This voltage reference is suitable for the low-power low-voltage applications.