Research and Design on High Reliability Mass Capacity Memory Based on NAND Flash

ZHU Xiao-yan; QIU Qing-lin; RONG Jin-ye; ZHANG Wei-gong

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Research and Design on High Reliability Mass Capacity Memory Based on NAND Flash

更新时间：2026-09-04

- Research and Design on High Reliability Mass Capacity Memory Based on NAND Flash
- Vol. 29, Issue 6, Pages: 61-63(2012)
- 作者机构：
  
  首都师范大学机构北京市高可靠嵌入式系统工程技术研究中心,北京,100048
- 作者简介：
- 基金信息：
- DOI：
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- Published：2012
- 稿件说明：
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朱晓燕, 邱庆林, 荣金叶, 张伟功. 一种高可靠大容量星载存储器的设计与研究[J]. 微电子学与计算机, 2012, 29(6): 61-63,67.

ZHU Xiao-yan, QIU Qing-lin, RONG Jin-ye, et al. Research and Design on High Reliability Mass Capacity Memory Based on NAND Flash[J]. 2012, 29(6): 61-63.
朱晓燕, 邱庆林, 荣金叶, 张伟功. 一种高可靠大容量星载存储器的设计与研究[J]. 微电子学与计算机, 2012, 29(6): 61-63,67. DOI：

ZHU Xiao-yan, QIU Qing-lin, RONG Jin-ye, et al. Research and Design on High Reliability Mass Capacity Memory Based on NAND Flash[J]. 2012, 29(6): 61-63. DOI：

摘要

凭借着存储密度大和存储速率高的特点

基于NAND Flash的大容量存储器在星载存储领域得到了广泛的应用

由于NAND Flash本身存在缺陷

基于NAND Flash的大容量存储器在恶劣环境下的可靠性难以保证.提出了通过FPGA设计SRAM对关键数据三模冗余读取和缓冲、NAND Flash阵列热备份和数据的回放校验以及合理的坏块管理等措施

实现了高可靠性的大容量存储器.实验说明该系统不会因为外在偶然因素而造成数据的不完整

而且整个存储系统的成本开销相对于目前的星载存储器也非常低.

Abstract

The mass capacity memory based on NAND Flash is widely used in space storage fields recently. However

due to a variety of condition constrain and bad blocks can be produced

so the reliability of mass capacity storage can not be assured especially in severe environment.A new design plan is proposed to realize the high reliability mass capacity memory.The core technology are reasonable bad block management

triplication redundancy reading and writing of key data through SRAM

warm standby of Flash arrays and checking of data playback.The experiment result shows that the system data will not be caused to incomplete

and the cost of the whole storage system is lower than the current onboard memory.

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