A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects

LI Yi-qing; WANG Zi-ou; LI Wen-shi; LI You-zhong; CHEN Zhi; MAO Ling-feng

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A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects

更新时间：2026-09-04

- A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects
- Vol. 28, Issue 12, Pages: 75-78(2011)
- 作者机构：
  
  苏州大学电子信息学院,江苏,苏州,215021
- 作者简介：
- 基金信息：
- DOI：
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- Published：2011
- 稿件说明：
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李亦清, 王子欧, 李文石, 李有忠, 陈智, 毛凌锋. 考虑量子效应的短沟道n-MOSFET表面电势分布数值模型[J]. 微电子学与计算机, 2011, 28(12): 75-78.

LI Yi-qing, WANG Zi-ou, LI Wen-shi, et al. A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects[J]. 2011, 28(12): 75-78.
李亦清, 王子欧, 李文石, 李有忠, 陈智, 毛凌锋. 考虑量子效应的短沟道n-MOSFET表面电势分布数值模型[J]. 微电子学与计算机, 2011, 28(12): 75-78. DOI：

LI Yi-qing, WANG Zi-ou, LI Wen-shi, et al. A Numerical Model of the Distribution of Surface Potential for Short-Channel n-MOSFET with Considering the Quantum Effects[J]. 2011, 28(12): 75-78. DOI：

摘要

提出了一种考虑量子效应的短沟道沟道表面电势数值模型

并在此基础上分析了源漏偏压对表面势分布的影响.计算结果和二维量子力学数值模拟结果很好地吻合.结果表明:源漏偏压会造成线性区的沟道表面势减小

进而导致阈值电压下跌;而在饱和区

源漏偏压的影响更大

会造成表面势明显下降

阈值下跌将会更加严重.

Abstract

In this paper

a numerical model for the distribution of channel surface potential has been proposed.The influence of the drain to source bias on the distribution of channel surface potential has been studied.Calculation results agree well with 2-D quantum mechanical numerical simulation.The results demonstrate that the voltage drop between drain and source reduces the channel surface potential in linear region and leads to Vth roll-off

whereas the influence will be more serious in saturation region.

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