Design of Inductorless CMOS Low Noise Amplifier for 3~5 GHz UWB Receiver

WANG Wei; GONG Zhao-ying; YANG Keng; MA Xiao-ying; TANG Zheng-wei; WANG Yue-sheng

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Design of Inductorless CMOS Low Noise Amplifier for 3~5 GHz UWB Receiver

更新时间：2026-09-04

- Design of Inductorless CMOS Low Noise Amplifier for 3~5 GHz UWB Receiver
- Vol. 29, Issue 6, Pages: 130-133(2012)
- 作者机构：
  
  重庆邮电大学机构光电工程学院,重庆,400065
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2012
- 稿件说明：
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王巍, 宫召英, 杨铿, 马晓英, 唐政维, 王岳生. 3～5 GHz超宽带无电感CMOS低噪声放大器设计[J]. 微电子学与计算机, 2012, 29(6): 130-133,137.

WANG Wei, GONG Zhao-ying, YANG Keng, et al. Design of Inductorless CMOS Low Noise Amplifier for 3~5 GHz UWB Receiver[J]. 2012, 29(6): 130-133.
王巍, 宫召英, 杨铿, 马晓英, 唐政维, 王岳生. 3～5 GHz超宽带无电感CMOS低噪声放大器设计[J]. 微电子学与计算机, 2012, 29(6): 130-133,137. DOI：

WANG Wei, GONG Zhao-ying, YANG Keng, et al. Design of Inductorless CMOS Low Noise Amplifier for 3~5 GHz UWB Receiver[J]. 2012, 29(6): 130-133. DOI：

摘要

基于TSMC O.18μm RFCMOS工艺设计了一种无电感并联负反馈的超宽带低噪声放大器(LNA).在3~5 GHz工作频率范围内

电阻电流复用技术为整体电路提供自偏置

使其在足够的带宽范围内均可实现较高增益;同时噪声相消技术又可消除部分沟道热噪声

在很大程度上降低了放大器的噪声系数

由仿真结果可以看到:LNA在3~5 GHz内实现了良好输入输出匹配和较好的线性度

同时得到了较好的电压增益和噪声性能;并且其在整个频带范围内增益达到11~13.9 dB

噪声系数小于4.6 dB.整个设计最大的优点是没有用到片上电感

使得芯片面积大大缩小

这对商业应用具有极大的吸引力。

Abstract

A shunt feedback inductorless UWB LNA implemented in a 180 nm CMOS technology is here reported. Covering a 3 to 5 GHz band

the circuit uses resistive current reuse technique as self bias to obtain the relative gain within wide band

and the noise cancellation technique to cancel part of thermo noise in the channel

which can effectively lower NF over the desired UWB band.The simulation results showed that the designed LNA achieves a NF of 4.6 dB in the 3~5 GHz UWB band and a power gain of 11~13.9 dB.The active inductance design greatly reduces the chip size

which has great potential in commercial applications.

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