Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology

JIANG Shu-fa; ZHANG Guo-jun

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Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology

更新时间：2026-09-04

- Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology
- Vol. 30, Issue 4, Pages: 75-78(2013)
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室机构,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2013
- 稿件说明：
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姜树法, 张国俊. 分段温度曲率补偿双极工艺带隙基准设计[J]. 微电子学与计算机, 2013, 30(4): 75-78.

JIANG Shu-fa, ZHANG Guo-jun. Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology[J]. 2013, 30(4): 75-78.
姜树法, 张国俊. 分段温度曲率补偿双极工艺带隙基准设计[J]. 微电子学与计算机, 2013, 30(4): 75-78. DOI：

JIANG Shu-fa, ZHANG Guo-jun. Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology[J]. 2013, 30(4): 75-78. DOI：

摘要

介绍一种采用双极工艺适用于低压差线性稳压源的带隙基准设计

基准具有使能电路

有效减小锁定状态下的静态功耗

锁定状态下静态电流为34.419pA.针对低压差线性稳压源的应用环境要求

对基准工作温度范围内进行分段曲率补偿技术以降低其温度漂移.-40℃~140℃温度范围内基准电源的温度系数达到25.7ppm/℃.该基准无运放

以降低运放失调电压的影响

其电源抑制比为-80.33dB.电源电压在2.5V~6V变化时

基准大小变化0.3mV.

Abstract

This paper presents a bandgap reference in bipolar process which is used in Low - dropout linear regulator.The reference has an enable circuit to reduce the power consumption in shutdown mode.When the circuit is shutdown

the current to ground is 34.419pA.Considering the Low-dropout linear regulators application environment

a piecewise curvature - corrected technology is used for reducing the voltage drift when the chip temperature is high.The PPM of this circuit is 25.7/ C when the temperature is switch form -40℃to 140℃.The reference is designed without any operational amplifier to reduce the impact of the Op-Amps offset voltage and the PSRR of this bandgap reference is -80.33dB.The reference skews 0.3mV under the supply voltage ranging from 2.5V to 6V.

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