A High-Low Side Current Sense Circuits for High Power LED Driver

YANG Wei-li; ZHAO Ye; HEI Yong

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A High-Low Side Current Sense Circuits for High Power LED Driver

更新时间：2026-09-04

- A High-Low Side Current Sense Circuits for High Power LED Driver
- Vol. 30, Issue 1, Pages: 94-96(2013)
- 作者机构：
  
  中国科学院机构微电子研究所,北京,100029
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2013
- 稿件说明：
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杨卫丽, 赵野, 黑勇. 用于LED驱动芯片的高低边电流检测电路[J]. 微电子学与计算机, 2013, 30(1): 94-96,99.

YANG Wei-li, ZHAO Ye, HEI Yong. A High-Low Side Current Sense Circuits for High Power LED Driver[J]. 2013, 30(1): 94-96.
杨卫丽, 赵野, 黑勇. 用于LED驱动芯片的高低边电流检测电路[J]. 微电子学与计算机, 2013, 30(1): 94-96,99. DOI：

YANG Wei-li, ZHAO Ye, HEI Yong. A High-Low Side Current Sense Circuits for High Power LED Driver[J]. 2013, 30(1): 94-96. DOI：

摘要

本文介绍了一种适用于大功率LED驱动芯片的高低边电流检测电路.该检测电路可以根据实际应用系统不同实现高低边检测电路的自动切换

不需要额外设置

并且采用该电流检测电路的LED驱动芯片能支持升压、降压以及升—降压等多种拓扑结构的应用

为LED驱动芯片提供更广阔的应用市场.芯片采用CSMC 0.6μm 60VBCD工艺实现

测试结果显示当基准电压VREF为1.217V时

LED电流为371.3mA

采样比例与设计的基本一致

从而验证了该高低边电流检测电路的可行性.

Abstract

A high-low side current sense circuits for high power LED driver are designed.The two current sense circuits can switch freely according to application system.The two current sense circuits also can be used in boost topology

buck topology and boost-buck topology

etc.The circuit is implemented in CSMC 0.6μm 60V BCD process.The test results show that LED current is 371.3mA with 1.217V VREF.So the sense circuit is feasible.

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