A Design of High Performance Voltage Reference Based on Subthreshold

DAI Yun; ZHANG Guo-jun

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A Design of High Performance Voltage Reference Based on Subthreshold

更新时间：2026-09-04

- A Design of High Performance Voltage Reference Based on Subthreshold
- Vol. 30, Issue 5, Pages: 108-111(2013)
- 作者机构：
  
  电子科技大学薄膜与器件国家重点实验室,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2013
- 稿件说明：
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代赟, 张国俊. 一种高性能的亚阈值基准电压源设计[J]. 微电子学与计算机, 2013, 30(5): 108-111,116.

DAI Yun, ZHANG Guo-jun. A Design of High Performance Voltage Reference Based on Subthreshold[J]. 2013, 30(5): 108-111.
代赟, 张国俊. 一种高性能的亚阈值基准电压源设计[J]. 微电子学与计算机, 2013, 30(5): 108-111,116. DOI：

DAI Yun, ZHANG Guo-jun. A Design of High Performance Voltage Reference Based on Subthreshold[J]. 2013, 30(5): 108-111. DOI：

摘要

本文给出了一种基于亚阈值MOS特性的基准电压源.通过使用线性区工作的MOS管代替传统电阻来消除掉迁移率和电流的温度影响

拓宽了温度范围

改善了性能.采用0.5mCMOS工艺进行仿真.结果表明电路能在2.5~8V范围内工作

线性调整率为0.3mV/V.在3.3V工作电压下

输出基准在-55℃到150℃温度范围内温度系数为7.3ppm/℃

静态功耗为13.8W

1kHz下电源抑制比为-53dB.该基准电压源的设计能满足宽温度范围、低温漂、低功耗和高电源抑制比的要求.

Abstract

A voltage reference based on subthreshold is presented in this paper. The MOSFET working in linear region

instead of the traditional resistance

is used to eliminate the mobility and current temperature impact. In this way

the range of temp is broadened and performance is improved. The circuit is simulated with 0. 5m CMOS model and the result shows that the circuit can work ranging from 2. 5 to 8V and its line regulation is 0. 3mV/V. Under 3.3V operating voltage

the output reference tempcoefficient in -55℃ to 150℃ is 7. 3ppm/℃

and its static power is 13.8W

power supply rejection ration is -53dB at 1kHz. The design of reference meets the requirements of a wide temperature range

low temprature drift

low power and high power supply rejection ration.

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