This paper presents the design and performance of a 3.4~3.6 GHz power amplifier (PA) chip implemented in 2 μm InGaP/GaAs HBT technology.A three-stage cascade configuration is adopted
and the output matching network is designed on the PCB.A series resonant circuit is designed off-chip and connected to the PA chip by a bondwire in order to reduce the 2nd and 3rd harmonics.Under V=4.3 V and V =3.3 V
the measured P is 28.5 dBm with a PAE of 28.3%
the 2nd and 3rd harmonics are suppressed effectively and the values are -50 dBc and-43 dBc
respectively.Besides
the PA shows good linear gain over 28.3 dB with the gain flatness only ±0.21 dB.
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Related Author
WANG Hao-quan
LI Zhi-qiang
Related Institution
Beijing Key Laboratory of Radio Frequency IC Technology for Next Generation Communications, Institute of Microelectronics of Chinese Academy of Sciences
R&D Center of HealthCare Electronics, Institute of Microelectronics of Chinese Academy of Sciences
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences