Application of Inverse Narrow Width Effect in VLSI at 40 nm Process

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Application of Inverse Narrow Width Effect in VLSI at 40 nm Process

更新时间：2026-09-04

- Application of Inverse Narrow Width Effect in VLSI at 40 nm Process
- Vol. 31, Issue 4, Pages: 100-102(2014)
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- Published：2014
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40nm工艺下反向窄沟道效应对VLSI电路设计的影响[J]. 微电子学与计算机, 2014, 31(4): 100-102,107.

Application of Inverse Narrow Width Effect in VLSI at 40 nm Process[J]. 2014, 31(4): 100-102.
40nm工艺下反向窄沟道效应对VLSI电路设计的影响[J]. 微电子学与计算机, 2014, 31(4): 100-102,107. DOI：

Application of Inverse Narrow Width Effect in VLSI at 40 nm Process[J]. 2014, 31(4): 100-102. DOI：

摘要

反向窄沟道效应（INWE）是纳米级工艺下较为明显的版图效应，它使MOS管阈值电压V随着OD（扩散区）宽度的下降而下降，由此使得饱和电流I提高并最终影响器件的速度.重点阐述了产生INWE的原因，同时将INWE考虑在标准单元库的设计当中.以TSMC N40LP 12T标准单元库为基础，根据INWE现象重新对电路结构（Circuit Structure）和版图（Layout）进行设计，最终能够在原有版图面积下整体性能提升5%以上，整体功耗升高控制在2%以内，从而得到有着更好PPA（Power Performance Area）指标的标准单元库器件.

Abstract

INWE (Inverse narrow width effect) is a distinctive layout effect in nanometer scale

which will decrease the threshold voltage with the decreasing of the OD (Definition of diffusion area) width

finally

it will affect the speed with the increasing of Idsat (saturate current).The key point of this paper is the application of INWE in VLSI design.Not only tell the reason of INWE in this paper

but also it re-designs the standard cell library taking the INWE into account.All the design of this paper is based on the TSMC N40LP12T standard cell library

the paper changes the structure of some circuits and re-plan the layout design.And it gains performance increase more than 5% at the cost of lower than 2% power consumption

which all occurs in the same area of the layout occupation.The better PPA (Power Performance Area) is all based on the INWE in the standard library design.

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