Radio Frequency Power Amplifier Based on SiGe HBT

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Radio Frequency Power Amplifier Based on SiGe HBT

更新时间：2026-09-04

- Radio Frequency Power Amplifier Based on SiGe HBT
- Vol. 31, Issue 4, Pages: 144-147(2014)
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- Published：2014
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基于SiGe HBT的射频功率放大器[J]. 微电子学与计算机, 2014, 31(4): 144-147.

Radio Frequency Power Amplifier Based on SiGe HBT[J]. 2014, 31(4): 144-147.
基于SiGe HBT的射频功率放大器[J]. 微电子学与计算机, 2014, 31(4): 144-147. DOI：

Radio Frequency Power Amplifier Based on SiGe HBT[J]. 2014, 31(4): 144-147. DOI：

摘要

基于国内的0.18μm SiGe BiCMOS工艺，针对该工艺下SiGe HBTs功率器件击穿电压、工作频段的稳定性和最优负载阻抗值等方面的研究，给出了功率放大器的设计优化过程，比较了功率SiGe HBTs在共射和共基两种结构下的频率与最大功率增益性能.实现了一款应用于2.4GHz无线通信的全集成A类功率放大器.测试结果表明：S<-13dB，S<-10dB，S=13.8dB，输出1dB压缩点为10.97dBm，饱和输出功率为16.7dBm.

Abstract

Aiming at SiGe HBTs power devices

the breakdown voltage

stability in working frequency

maximum optimization load impedance and so on are researched based on a 0.18 μm SiGe BiCMOS technology in a domestic foundry.And it gives the design and optimization process of power amplifier.The performance of frequency and maximum power gain of power SiGe HBTs in two configuration common emitter and common base are compared.A class A power amplifier with all devices integrated on chip is achieved which will be used in 2.4GHz wireless communication field.Measurement results show that S <-13 dB

S <-10 dB

S=13.8 dB

output power 1 dB compressed is 10.97 dBm

and saturation output power is 16.7 dBm.

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