The Design of Linear RF Power Amplifier Based on SiGe Process

GUAN Hui-zheng; YAN Yue-peng

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The Design of Linear RF Power Amplifier Based on SiGe Process

更新时间：2026-09-04

- The Design of Linear RF Power Amplifier Based on SiGe Process
- Vol. 32, Issue 1, Pages: 64-67(2015)
- 作者机构：
  
  中国科学院微电子研究所机构电子系统总体技术研究室,北京,100029
- 作者简介：
- 基金信息：
- DOI：
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- Published：2015
- 稿件说明：
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贯会征, 阎跃鹏. 基于SiGe工艺的线性功率放大器设计[J]. 微电子学与计算机, 2015, 32(1): 64-67.

GUAN Hui-zheng, YAN Yue-peng. The Design of Linear RF Power Amplifier Based on SiGe Process[J]. 2015, 32(1): 64-67.
贯会征, 阎跃鹏. 基于SiGe工艺的线性功率放大器设计[J]. 微电子学与计算机, 2015, 32(1): 64-67. DOI：

GUAN Hui-zheng, YAN Yue-peng. The Design of Linear RF Power Amplifier Based on SiGe Process[J]. 2015, 32(1): 64-67. DOI：

摘要

基于SiGe Heterojunction Bipolar Transistors(HBT)工艺设计了一款线性射频功率放大器.该功率放大器采用三级级联结构

每一级采用自适应偏置网络

级间匹的网络集成在片内

匹配网络中的电感由绑定线实现.该功率放大器工作在2GHz

带宽50MHz

增益30dB

在1dB压缩点输出功率(P1dB)为27.1dBm

功率附加效率(PAE)为36%.该功放由3.4V电压供电

芯片尺寸1mm×0.7mm.

Abstract

A linear RF power amplifier based on SiGe Heterojunction Bipolar Transistors (HBT) is introduced in this paper. The 3-stage power amplifier is biased by self-adaptive bias in each stage. The inter-match networks are integrated in the chip and the bonding wires are used as the inductors in the inter-match networks.The power amplifier works at 2GHz

the band width of the power amplifier is 50MHz

gain is 30dB

the output power at 1dB compression point is 27.1dBm

the power added efficiency is 36% at 1dB compression point. The supply power of the power amplifier is 3.4V

the chip size is 1mm×0.7mm.

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