Hardened SRAM Design Based on TDICE Cell

SUN Jing; CHEN Zhen-jiao; TAO Jian-zhong; XUE Hai-wei; XU Xin-yu

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Hardened SRAM Design Based on TDICE Cell

更新时间：2026-09-04

- Hardened SRAM Design Based on TDICE Cell
- Vol. 33, Issue 7, Pages: 39-43(2016)
- 作者机构：
  
  1. 江南大学物联网学院工程学院,江苏,无锡,214062
  2. 中国电子科技集团公司第58研究所,江苏,无锡,214035
- 作者简介：
- 基金信息：
- DOI：
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- Published：2016
- 稿件说明：
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孙敬, 陈振娇, 陶建中, 薛海卫, 徐新宇. 基于TDICE单元的SRAM抗SEU加固设计[J]. 微电子学与计算机, 2016, 33(7): 39-43.

SUN Jing, CHEN Zhen-jiao, TAO Jian-zhong, et al. Hardened SRAM Design Based on TDICE Cell[J]. 2016, 33(7): 39-43.
孙敬, 陈振娇, 陶建中, 薛海卫, 徐新宇. 基于TDICE单元的SRAM抗SEU加固设计[J]. 微电子学与计算机, 2016, 33(7): 39-43. DOI：

SUN Jing, CHEN Zhen-jiao, TAO Jian-zhong, et al. Hardened SRAM Design Based on TDICE Cell[J]. 2016, 33(7): 39-43. DOI：

摘要

双立互锁存储单元(DICE)

在保持状态下是一种可靠有效的单粒子翻转(SEU)加固方法

但是

基于DICE单元的SRAM在读操作下会发生抗SEU失效.相比抗单个敏感节点翻转的效果

DICE抗多个敏感节点翻转的能力较弱.为此

在DICE结构的基础上采用读写分离机制

以解决DICE单元在读写过程中的节点翻转问题.同时

根据电阻加固原理

在DICE存储单元的节点之间增加NMOS管

即TDICE (Transistor DICE)结构

其利用晶体管隔离反馈回路中的节点间的连接

提高了SRAM的抗多节点翻转能力.Spectre仿真结果表明: 基于TDICE单元的SRAM具有较强的抗单粒子翻转能力.

Abstract

Dual Interlocked Storage Cell (DICE) is a reliable and effective method for Single Event Upset (SEU) reinforcement in maintaining state. However

SEU still occur in DICE cell-based SRAM

due to the weakness 0f DICE cell during reading and writing. Compared with the single node

the effect of DICE resistance multiple-node upset is weak. A separated-read-write structure is proposed to handle the DICE cells upset during reading and writing. And according to the resistance reinforcement principle

Transistor DICE (TDICE) is used that adding NMOS between the events of DICE. TDICE increases the effect of DICE resistance multiple-node upset through the connection between events in a transistor isolation feedback loop. The simulation results show that

TDICE shows a nearly complete tolerance SET with multiple-node upset. Spectre simulation results show that the SRAM based on the TDICE unit has a strong ability to resist a single event upset.

关键词

Keywords

references

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胡明浩, 李磊, 饶全林. 基于RHBD技术CMOS锁存器加固电路的研究[J]. 微电子学与计算机, 2010, 27(7): 206-209. DOI: 206

刘琳, 赵元富, 岳素格. SEU加固存储单元多节点翻转的准三维数值模拟[J]. 微电子学与计算机, 2010, 27(5): 99-102. DOI: 99

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