Design of VDMOS Semi-super Junction Cell Structure

LIU Ming; FENG Quan-yuan; ZHUANG Sheng-xian

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Design of VDMOS Semi-super Junction Cell Structure

更新时间：2026-09-04

- Design of VDMOS Semi-super Junction Cell Structure
- Vol. 32, Issue 12, Pages: 49-53(2015)
- 作者机构：
  
  西南交通大学微电子研究所,四川,成都,610031
- 作者简介：
- 基金信息：
- DOI：
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- Published：2015
- 稿件说明：
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刘铭, 冯全源, 庄圣贤. 一款VDMOS半超结元胞结构的设计[J]. 微电子学与计算机, 2015, 32(12): 49-53.

LIU Ming, FENG Quan-yuan, ZHUANG Sheng-xian. Design of VDMOS Semi-super Junction Cell Structure[J]. 2015, 32(12): 49-53.
刘铭, 冯全源, 庄圣贤. 一款VDMOS半超结元胞结构的设计[J]. 微电子学与计算机, 2015, 32(12): 49-53. DOI：

LIU Ming, FENG Quan-yuan, ZHUANG Sheng-xian. Design of VDMOS Semi-super Junction Cell Structure[J]. 2015, 32(12): 49-53. DOI：

摘要

设计了一款VDMOS 器件的元胞结构

采用半超结结构模型.传统VDMOS结构的导通电阻会随着击穿电压的增长而增长

而半超结结构可以缓和两者之间的矛盾.通过调节工艺条件

经过三次外延注入生长形成P柱

并采用增大外延层浓度和改善电荷平衡的方式

来达到减小元胞结构的特征导通电阻和提高击穿电压的目的.最终实现了1 005 V的耐压

特征导通电阻 102.91 mΩ*cm

栅漏电容5.65 pF/cm

阈值电压3.45 V的元胞结构

降低了超结结构的工艺难度

并获得较优的性能.

Abstract

The cell structure of VDMOS has been designed by Semi-super junction. The specific On-resistance in traditional VDMOS structure will increase as the growth of the breakdown voltage. While the Semi-super junction can ease the contradictions between Specific On-resistance and breakdown voltage. By the regulation of the process flow

P column has been achieved in the three times epitaxial growth. In order to reduce specific on-resistance and keep the high voltage

the epitaxial concentration has been increased and charge balance of the cell structure has been formed. The breakdown voltage 1005 V and the specific on-resistance 102.91 mΩ*cmhave been achieved with the cell structure. The gate-drain capacitance was 5.65pf/cm and the threshold voltage was 3.45 V. Compared with the super junction

Semi-super junction was reduced the process difficulty. Whats more

Semi-super junction devices have excellent performance.

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