Analysis Transmission Performance of TSV Interconnect Structure and Fault Model

SHANG Yu-ling; QIAN Wei; LI Chun-quan; DOU Xin-xin

Chinese

您当前的位置：

首页 >

文章列表页 >

Analysis Transmission Performance of TSV Interconnect Structure and Fault Model

更新时间：2026-09-04

- Analysis Transmission Performance of TSV Interconnect Structure and Fault Model
- Vol. 33, Issue 6, Pages: 73-77(2016)
- 作者机构：
  
  1. 桂林电子科技大学机构电子工程与自动化学院,广西,桂林,541004
  2. 桂林电子科技大学机电工程学院,广西,桂林,541004
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2016
- 稿件说明：
移动端阅览
尚玉玲, 钱伟, 李春泉, 豆鑫鑫. TSV互连结构传输性能分析及故障建模研究[J]. 微电子学与计算机, 2016, 33(6): 73-77.

SHANG Yu-ling, QIAN Wei, LI Chun-quan, et al. Analysis Transmission Performance of TSV Interconnect Structure and Fault Model[J]. 2016, 33(6): 73-77.
尚玉玲, 钱伟, 李春泉, 豆鑫鑫. TSV互连结构传输性能分析及故障建模研究[J]. 微电子学与计算机, 2016, 33(6): 73-77. DOI：

SHANG Yu-ling, QIAN Wei, LI Chun-quan, et al. Analysis Transmission Performance of TSV Interconnect Structure and Fault Model[J]. 2016, 33(6): 73-77. DOI：

摘要

随着集成电路复杂度的提高以及半导体制造工艺水平的不断发展

硅通孔(Through Silicon Via)TSV技术成为三维集成电路的一种主流互连技术

建立单个TSV的三维物理模型

通过回波损耗来分析不同物理参数和尺寸变化对信号传输性能的影响; 利用硅通孔的参数提取模型对其进行RLC参数的提取

并建立等效的电路模型和故障电路模型.扫描频率在10 GHz范围内

利用故障电路末端电压来分析故障的大小

同时通过最小二乘法拟合一条根植电压曲线来判断故障大小.

Abstract

With the increasing complexity of IC and the development of the semiconductor manufacturing process

through silicon via(TSV) has become a main interconnect technology for 3D-IC. 3D physical model of single TSV is built to analyze the effect of different physical parameter and changing size on the performance of signal transmission by return loss.The parameter extraction model of TSV is adopted to obtain the parameter of RLC.Furthermore

both the equivalent circuit model and the fault circuit model are established. The value of the crack is determined by the changing terminal voltage of the fault circuit in the frequency range of 10 GHz.At the same time

the curve on judging the value of crack is estimated with the least square method.

关键词

Keywords

references

庞诚, 王志, 于大全. TSV结构的几种SPICE模型仿真[J]. 半导体技术, 2013, 38(10): 770-775. DOI: 770

BOGATIN E. 信号完整性分析[M]. 李玉山, 李丽平, 译. 北京: 电子工业出版社, 2005: 74-151.

李琰. TSV建模与耗散分析[D]. 西安: 西安电子科技大学, 2014.

费业泰. 误差理论与数据处理[M]. 北京: 机械工业出版社, 2004.

Pak J S, Ryu C, Kim J. Electrical characterization of through silicon via (TSV) depending on structural and material parameters based on 3D full wave simulation[C]//Proceedings of International Conference on Electronic Materials and Packaging. New York, USA: IEEE, 2007: 1-6.

Chen Po-yuan, Wu Cheng-wen, Kwai Ding-ming. On-chip testing of blind and open-sleeve TSVs for 3D IC before bonding[C]//Proceedings of 28th IEEE VLSI Test Symposium. Santa Cruz, USA: IEEE, 2010: 263-268.

蒋剑锋, 赵振宇, 邓全, 等. 3DSRAM中的TSV开路故障模型研究[J]. 计算机工程与科学, 2014, 36(12): 2331-2338. DOI: 2331

HO S W, Yoon S W, Zhou Q E, et al. High RF performance TSV silicon carrier for high frequency application[C]//Proceedings of 58th Electronic Components and Technology Conference. New York, USA: IEEE, 2008: 1946-1952.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Aerial vehicle detection algorithm based on multi-scale fusion and small-object enhancement

Aerial small object detection algorithm based on improved RT-DETR

Implementation and verification of a dual-chain power gating strategy for low power design

Simulation on the DC characteristics of double heterojunction p-GaN HEMT with AlN/GaN hybrid buffer layer

High gain stability high temperature operational amplifier based on reverse body bias

Related Author

No data

Related Institution

No data

AI问答

Postal code：100079
Tel：（010）53879206 Email：tmw@bjxintong.com.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09082226号-64 京公网安备11010602201714号
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰