Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology

ZHANG Hua-bin; LIU Ping; DENG Chun-jian; YANG Jian-jun; LIU Li-ming; CHEN Hui; WANG Hong-hang; XIONG Zhao-xin

Chinese

您当前的位置：

首页 >

文章列表页 >

Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology

更新时间：2026-09-04

- Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology
- Vol. 34, Issue 5, Pages: 35-39(2017)
- 作者机构：
  
  1. 电子科技大学中山学院,广东,中山,528402
  2. 电子科技大学物理电子学院,四川,成都,611731
  3. 电子科技大学计算机科学与工程学院,四川,成都,611731
  4. 陕西理工大学机构物理与电信工程学院,陕西,汉中,723000
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2017
- 稿件说明：
移动端阅览
张华斌, 刘萍, 邓春健, 杨健君, 刘黎明, 陈卉, 王红航, 熊召新. 基于锗硅BiCMOS工艺的低噪声差分放大器设计[J]. 微电子学与计算机, 2017, 34(5): 35-39.

ZHANG Hua-bin, LIU Ping, DENG Chun-jian, et al. Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology[J]. 2017, 34(5): 35-39.
张华斌, 刘萍, 邓春健, 杨健君, 刘黎明, 陈卉, 王红航, 熊召新. 基于锗硅BiCMOS工艺的低噪声差分放大器设计[J]. 微电子学与计算机, 2017, 34(5): 35-39. DOI：

ZHANG Hua-bin, LIU Ping, DENG Chun-jian, et al. Design of a Differential Lower Noise Amplifier Using SiGe BiCMOS Technology[J]. 2017, 34(5): 35-39. DOI：

摘要

针对无线局域网前端接收机2.5 GHz的应用

提出了一种硅锗工艺低噪声差分放大器.采用差分级联放大器结构既能抑制输入端的共模噪声信号

又能因级联结构的高增益而抑制电路的噪声

确保电路的高性能; 同时选用JAZZ 0.35 m 1P4M锗硅BiCMOS工艺来制作.该放大器能有效地提供了50 Ω输入阻抗匹配且具备良好的温度特性.在频点2.5 GHz时

放大器的最大小信号电压增益为29.1 dB

噪声系数1.3 dB

输入/输出回波损耗都优于-11 dB

输入3阶交调点为-0.24 dBm.在直流电源电压3 V供应下

低噪声放大器消耗电流为3.7 mA.仿真结果表明

与其他文献相比

该放大器有更高的电压增益和更低的噪声

可以更加有效地应用于无线局域网及相关频点领域.

Abstract

A differential lower noise amplifier (LNA) for wireless local network (WLAN) in front-end receiver is presented

which is fabricated with a JAZZ 0.35 m 1P4M SiGe BiCMOS process. It can not only reject the common-mode noise signal in input port and but also depress circuit noise for using cascade topology

and realize its high performance. The LNA provides effectively a 50 Ωinput impedance matching and good temperature characteristic. At 2.5 GHz

the LNA exhibits a maximum small signal voltage gain of 29.1 dB

noise figure of 1.3 dB

input/output return loss better than -11 dB

and input IIP3 of -0.24 dBm

respectively. The LNA consumes 3.7 mA from a 3.0V DC supply. The simulation results show that

in comparison with the other LNAs

this LNA has higher voltage gain

lower noise and more efficaciously be utilized in WLAN and related fields.

关键词

Keywords

references

Roux P, Baeyens Y, Weiner J, et al. Ultra-low-power X-band SiGe HBT low-noise amplifiers[C]//IEEE/MTT-S International Microwave Symposium, 2007. Honolulu: IEEE, 2007: 1787-1790.

Li C, Wang X, Jain V, et al. 2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35 μm SiGe BiCMOS[C]//2015 IEEE 11th International Conference on ASIC (ASICON). China, Chengdu: IEEE, 2015: 1-4.

Jang S, Nguyen C. A high-gain power-efficient wideband v-band LNA in 0.18μm SiGe BiCMOS[J]. IEEE Microwave and Wireless Components Letters, 2016, 26(4): 276-278. DOI: 276

Fu T, Chen S, Hsu. A 0.35 μm SiGe BiCMOS RF front-end IC for TD-SCDMA receiver[C]//2002 IEEE Asia-Pacific Conference on ASIC. Taiwan, Taipei: IEEE, 2002: 315-318.

Min B, Rebeiz G M. Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching[J]. IEEE Microwave and Wireless Components Letters, 2007, 17(12): 891-893. DOI: 891

Lin Y, Wang T, L S. A fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology[C]//IEEE International Symposium on Circuits and Systems. New Orleans: IEEE, 2007: 425-428.

Wang C, Lee Y, Yang T. A high linearity low noise amplifier in a 0.35 μm SiGe BiCMOS for WCDMA applications[C]//IEEE VLSI-TSA International Symposium on VLSI Design. Taiwan, Hsinchu: IEEE, 2005: 153-156.

Lu Y, Krithivasan R, Kuo W L, et al. A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications[C]//2006 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. USA, San Francisco: IEEE, 2006.

黄东, 林福江. 一种采用后失真技术的高线性巴伦低噪声放大器[J]. 微电子学, 2016, 46(1): 18-21. DOI: 18

张胜标, 张志浩, 章国豪. 用于S波段的高线性低噪声放大器[J]. 电子器件, 2016, 39(1): 57-61. DOI: 57

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

An 8~14 GHz wideband power amplifier in SiGe BiCMOS

A Novel Exponential Curvature-Compensated BICMOS Bandgap Reference

Analysis and Improvement of Dynamic Key Management Based on WLAN 802.11i

Application of Simulated Annealing Algorithm on WLAN Channel Assignment

Simulation on the DC characteristics of double heterojunction p-GaN HEMT with AlN/GaN hybrid buffer layer

Related Author

LUO Jiang

HE Huan-huan

WANG Feng

ZHOU Zhong-jie

TONG Wei

LI Jian-kang

SU Guo-dong

SUN Jin-zhong

Related Institution

Nanjing Electronic Devices Institute

Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University

Institute of Microelectronics of Chinese Academy of Science

Pingdingshan University

Department of Electronic and Engineering, Shanghai Jiaotong University

AI问答

Postal code：100079
Tel：（010）53879206 Email：tmw@bjxintong.com.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09082226号-64 京公网安备11010602201714号
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰