A Trench Metal-Oxide-Semiconductor (T-MOS) with high-speed shutoff for high performance is proposed. Compared with conventional device

two vertical field planes are inserted into oxide trench in this new device

which introduce two new electric field peaks in the drift region to increase breakdown voltage and form a high electron-accumulated layer around the vertical drain field plane to decrease the specific on-resistance. Therefore

Baligas figure of merit (FOM) of this new device is improved. Furthermore

due to the vertical field plane between the gate and drain field plane in this new device

it can lead to the gate-to-drain capacitance partly transferred to gate-to-source capacitance and drain-to-source capacitance. The results show that the proposed device with =1.7 m and =2.3×10 cm can achieve the Baligas figure of merit of 84.8% improvement and drain-to-source charge of 26.8% improvement.