A MTM Antifuse PROM Bitcell With a High Reliability for Satellite Use

SUN Jie-jie; XU Hai-ming; HU Xiao-qin; YU Yue; YUAN Tong-wei; PAN Bin; HU Yong-qiang

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A MTM Antifuse PROM Bitcell With a High Reliability for Satellite Use

更新时间：2026-09-04

- A MTM Antifuse PROM Bitcell With a High Reliability for Satellite Use
- Vol. 33, Issue 12, Pages: 89-92(2016)
- 作者机构：
  
  中国电子科技集团公司第58研究所,江苏,无锡,214072
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2016
- 稿件说明：
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孙杰杰, 徐海铭, 胡小琴, 于跃, 袁同伟, 潘滨, 胡永强. 一种星用高可靠性MTM反熔丝PROM存储单元[J]. 微电子学与计算机, 2016, 33(12): 89-92.

SUN Jie-jie, XU Hai-ming, HU Xiao-qin, et al. A MTM Antifuse PROM Bitcell With a High Reliability for Satellite Use[J]. 2016, 33(12): 89-92.
孙杰杰, 徐海铭, 胡小琴, 于跃, 袁同伟, 潘滨, 胡永强. 一种星用高可靠性MTM反熔丝PROM存储单元[J]. 微电子学与计算机, 2016, 33(12): 89-92. DOI：

SUN Jie-jie, XU Hai-ming, HU Xiao-qin, et al. A MTM Antifuse PROM Bitcell With a High Reliability for Satellite Use[J]. 2016, 33(12): 89-92. DOI：

摘要

提出了一种新型的

可用于卫星及其他航天器的高可靠性MTM反熔丝PROM存储单元

并围绕该存储单元

研究了其编程方式.实验表明

在PROM电路中采用该存储单元

且按照所述的编程方式

可以在编程过程中对未选中反熔丝实施有效保护

进而提高PROM芯片整体的可靠性和使用寿命.

Abstract

In this paper

a novel MTM anti-fuse PROM bitcell with a high reliability is proposed

which can be used in stars and other spacecrafts. Based on this bitcell

programming and verification methods are studied. The use in PROM of the bitcell with the programming method described in this paper

can offer an effective protection to unselected anti-fuses in the programming process

therefore the reliability and working life of the PROM are improved.

关键词

Keywords

references

周霁, 孙武山. 256K PROM电路技术研究[C]// 第十届全国抗辐射电子学与电磁脉冲学术年会论文集. 北京, 2009.

Kim J, Lee K. Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse[J]. Electron Device Letters, IEEE, 2003, 24(9): 589-591. DOI: 589

Nicollian P E, Hunter W R. Model for the leakage instability in unprogrammed amorphous silicon antifuse devices[C]//Reliability Physics Symposium, 1995. 33rd Annual Proceeding, IEEE International. IEEE, 1995: 42-47.

王长河. 航天电子系统中的电子元器件辐射效应分析及抗辐射对策[J]. 电子元器件应用, 2001, 7(7): 4-6. DOI: 4

Zhang G, King Y, Elfoukhy S, et al. On-state reliability of amorphous silicon antifuses[C]// Electron Devices Meeting 1988. IEDM '88. Technical Digest, International. San Franciso, CA, 1996: 551-554.

焦俊陶. 反熔丝型存储器设计技术研究[D]. 西安: 电子科技大学, 2011.

Shih C C, Lambertson R, Hawley F, et al. Characterization and modeling of a highly reliable metal-to-metal antifuse for high-performance and high-density field-programmable gate arrays[C]// Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International, Denver: IEEE, 1997: 25-33.

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