This paper presents a new way to evaluate the SEU performance of ASIC internal memory by using Memory-Build-In-Self-Test(MBIST) technology
while an statistical method of effective irradiation dose for MBIST was studied and developed. At last
a SEE verification test was carried out on the heavy ion accelerator by using this method. By comparing with SRAM of the same structure
the results show the error between MBIST(effective irradiation dose 1.27E+7icons/cm)and SRAM (irradiation dose 1.0E+7icons/cm) is less than 2 times
which means the MBIST method can be used for evaluating the SEU performance of ASIC internal RAM conveniently and accurately.
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references
Hubert G, Truyen D, Artola L, et al. SET and SEU analyses based on experiments and multi-physics modeling applied to the atmel cmos library in 180 and 90-nm technological nodes[J]. IEEE Trans. Nucl. Sci., 2014, 61(6): 1558-1578. DOI: 1558
HE YiBai, CHEN ShuMing. Comparison of heavy-ion induced SEU for D- and TMR-flip-flop designs in 65-nm bulk CMOS technology[J]. Science China Information Sciences, 2014, 57(10): 1-7. DOI: 1
Paolo Rech, lessandro Paccagnella, Ichelangelo Grosso, et al. Evaluating the Impact of DfM library optimizations on alpha-induced seu sensitivity in a microprocessor core[J]. IEEE Trans. Nucl. Sci., 2010, 57(4): 2098-2105. DOI: 2098
Kubota K, Masuda M, Furuta J. A low-power and area-efficient radiation-hard redundant flip-flop, DICE ACFF, in a 65 nm thin-BOX FD-SOI[C]//2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS). Oxford, England, 2013.