The Effect of the Gate Length on the Transconductance of Graphene Transistors

ZHANG Qing-wei; LI Ping; LIAO Yong-bo; WANG Gang; ZENG Rong-zhou; WANG Heng; ZHAI Ya-hong

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The Effect of the Gate Length on the Transconductance of Graphene Transistors

更新时间：2026-09-04

- The Effect of the Gate Length on the Transconductance of Graphene Transistors
- Vol. 34, Issue 12, Pages: 25-27(2017)
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室机构,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2017
- 稿件说明：
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张庆伟, 李平, 廖永波, 王刚, 曾荣周, 王恒, 翟亚红. 石墨烯晶体管的栅长对跨导的影响[J]. 微电子学与计算机, 2017, 34(12): 25-27, 33.

ZHANG Qing-wei, LI Ping, LIAO Yong-bo, et al. The Effect of the Gate Length on the Transconductance of Graphene Transistors[J]. 2017, 34(12): 25-27.
张庆伟, 李平, 廖永波, 王刚, 曾荣周, 王恒, 翟亚红. 石墨烯晶体管的栅长对跨导的影响[J]. 微电子学与计算机, 2017, 34(12): 25-27, 33. DOI：

ZHANG Qing-wei, LI Ping, LIAO Yong-bo, et al. The Effect of the Gate Length on the Transconductance of Graphene Transistors[J]. 2017, 34(12): 25-27. DOI：

摘要

对于传统的硅MOS场效应晶体管

器件跨导的大小正比于沟道的宽长比.本文在石墨烯晶体管中发现了相反的现象.制备了源漏之间距离相同

且沟道宽度相同的石墨烯晶体管

实验结果为沟道较长的晶体管跨导较大.究其原因

石墨烯晶体管中栅电极覆盖的沟道面积较大时

被感应的载流子数量较多

所以跨导较大.此实验结果和分析对石墨烯晶体管的进一步理解和应用有明显的意义.

Abstract

To traditional Si MOS field effect transistors

the transconductrance is proportional to the width length ratio of the channel. In this paper

the opposite phenomenon has been observed in graphene transistors. The graphene transistors with the same distance between source and drain electrodes and the same channel width have been fabricated. The transconductance with longer channel is larger. The reason is following. The channel area that covered by gate electrodes can affect the carriers in channel. The former is larger

the inductive latter is more. So

the transconductance is larger. The results and analysis are helpful to the comprehension and application of graphene transistors.

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references

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Novoselov K S, Fal'ko V I, Colombo L, et al. A roadmap for graphene[J]. Nature, 2012, 490(7419): 192-200. DOI: 192

陈铖颖, 蒋见花, 胡晓宇. 一种基于石墨烯霍尔器件的读出电路设计[J]. 微电子学与计算机, 2013, 30(12): 137-141. DOI: 137

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