A High Efficiency and Low Voltage Charge Pump Design

WEI Shao-jing; MEI Nian-song; ZHANG Zhao-feng; MIN Jia-hua

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A High Efficiency and Low Voltage Charge Pump Design

更新时间：2026-09-04

- A High Efficiency and Low Voltage Charge Pump Design
- Vol. 34, Issue 10, Pages: 72-75(2017)
- 作者机构：
  
  1. 上海大学材料科学与工程学院,上海,200072
  2. 中国科学院机构上海高等研究院,上海,201203
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2017
- 稿件说明：
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魏哨静, 梅年松, 张钊锋, 闵嘉华. 一种低压高效的电荷泵设计[J]. 微电子学与计算机, 2017, 34(10): 72-75.

WEI Shao-jing, MEI Nian-song, ZHANG Zhao-feng, et al. A High Efficiency and Low Voltage Charge Pump Design[J]. 2017, 34(10): 72-75.
魏哨静, 梅年松, 张钊锋, 闵嘉华. 一种低压高效的电荷泵设计[J]. 微电子学与计算机, 2017, 34(10): 72-75. DOI：

WEI Shao-jing, MEI Nian-song, ZHANG Zhao-feng, et al. A High Efficiency and Low Voltage Charge Pump Design[J]. 2017, 34(10): 72-75. DOI：

摘要

针对于传统电荷泵结构存在的阈值压降和受体效应影响的问题

在传统四相时钟电荷泵结构基础上通过增加衬底自举电容及辅助管增大传输管的衬底电压

降低体效应的影响

提升了电荷泵电路的转换效率

降低了电荷泵电路的启动电压.电荷泵电路基于TSMC 0.18 μm CMOS工艺进行设计与仿真

仿真结果表明: 改进型电荷泵的工作电压可以低至0.8 V

转换效率76.25%.

Abstract

In view of the traditional charge pump threshold loss and body effect

a modification of four phase clock charge pump is proposed

which adds the substrate bootstrap capacitance and the auxiliary transistor to increase the body voltage. And then it reduces the body effect. Therefore

the conversion ratio is promoted

while the starting voltage of the charge pump circuit is reduced. THEN

THE CHARGE PUMP CIRCUIT IS DESIGNED AND SIMULATED BASED ON THE PROCESS OF TSMC 0.18 m CMOS. The simulation results show that the improved charge pump can work in voltage of 0.8 V

the conversion ratio is 76.25%.

关键词

Keywords

references

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张炎峰, 姜伟, 胡玉青, 等. 新型低压四相位高效率电荷泵电路[J]. 电子设计工程, 2016, 24(5): 148-151. DOI: 148

李卿, 周健军. 一种完全消除阈值电压损失的低纹波高效电荷泵[J]. 微电子学与计算机, 2015, 32(4): 86-89. DOI: 86

姜凯, 张瑛. 一种高增益交叉耦合电荷泵的设计[J]. 微电子学, 2015, 45(5): 599-601. DOI: 599

Yan N, Min H, Zhao D, et al. An ultra-low-power embedded EEPROM for passive RFID tags[J]. J Semicond, 2006, 27(6): 994-998. DOI: 994

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