An X-band High Efficiency Class-E Power Amplifier Based on GeSi-0.13 μm Process

CUI Kai; LI Zhi-qiang; LIU Yu; ZHANG Hai-ying

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An X-band High Efficiency Class-E Power Amplifier Based on GeSi-0.13 μm Process

更新时间：2026-09-04

- An X-band High Efficiency Class-E Power Amplifier Based on GeSi-0.13 μm Process
- Vol. 34, Issue 8, Pages: 82-86(2017)
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 西安电子科技大学,陕西,西安,710071
  3. 新一代通信射频芯片技术北京市重点实验室,北京,100029
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2017
- 稿件说明：
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崔凯, 李志强, 刘昱, 张海英. 基于SiGe-0.13 μm X波段高效率功率放大器[J]. 微电子学与计算机, 2017, 34(8): 82-86, 92.

CUI Kai, LI Zhi-qiang, LIU Yu, et al. An X-band High Efficiency Class-E Power Amplifier Based on GeSi-0.13 μm Process[J]. 2017, 34(8): 82-86.
崔凯, 李志强, 刘昱, 张海英. 基于SiGe-0.13 μm X波段高效率功率放大器[J]. 微电子学与计算机, 2017, 34(8): 82-86, 92. DOI：

CUI Kai, LI Zhi-qiang, LIU Yu, et al. An X-band High Efficiency Class-E Power Amplifier Based on GeSi-0.13 μm Process[J]. 2017, 34(8): 82-86. DOI：

摘要

基于IBM SiGe 0.13 μm BiCMOS工艺，设计了一个工作在超过BVceo的SiGe HBTs class E功放，在产生高的输出功率的同时又保持了比较高的功率附加效率.利用SiGe堆叠E类结构来增加整体的电压摆幅，每个管子都是工作在安全操作区域，同时电压是超过BVceo的，进一步加大了功放的输出功率.设计了级间匹配网络，既保持了输出级比较高的击穿电压，又兼顾了功放的性能.在10 GHz工作频率下，功放的峰值PAE达到了47.4%，同时其输出功率达到21.43 dBm.

Abstract

Based on IBM SiGe 0.13 μm BiCMOS process

a beyond BVceo Class-E design methodology for SiGe HBT power amplifiers is adopted to generate high output power while maintaining high efficiency. SiGe stacked Class-E architecture is also introduced to increase the overall voltage swing with each series stacked device operating in the safe operating area beyond BVceo while its voltage is beyond BVceo

and then we further increase output power of PA. We designed the interstage matching to not only maintain the high breakdown voltage of output stage

but also achieve good power amplifier performance.When it operate at 10 GHz

the power amplifiers peak power add efficiency can reach 47.4%

and the output power is 21.43 dBm.

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references

Sokal N O, Sokal A D. Class E-A new class of high-efficiency tuned single-ended switching power amplifiers[J]. IEEE Journal of solid-state circuits, 1975, 10(3): 168-176. DOI: 168

Chen J H, Helmi S R, Jou Y S, et al. A fully-integrated 18 GHz class-E power amplifier in a 45 nm CMOS SOI technology[C]//2014 IEEE Radio Frequency Integrated Circuits Symposium. IEEE, 2014: 247-250.

IBM. 8HP Design guidelines for the operation voltage limits[M]. IBM Foundry, 2011.

Yamashita Y, Kanemoto D, Kanaya H. et al. A CMOS class-E power amplifier of 40% PAE at 5 GHz for constant envelope modulation system[C]//Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on. IEEE, 2013: 66-68.

Kavousian A, Su D K, Hekmat M, et al. A digitally modulated polar CMOS power amplifier with a 20-MHz channel bandwidth[J]. IEEE Journal of Solid-State Circuits, 2008, 43(10): 2251-2258. DOI: 2251

Chen S T, Lee Y C, Liu J Y C. A 10-GHz bias modulated class-E power amplifier in 90-nm CMOS[C]//Radio-Frequency Integration Technology (RFIT), 2016 IEEE International Symposium on. IEEE, 2016: 1-3.

Grebennikov A V, Jaeger H. Class E with parallel circuit-a new challenge for high-efficiency RF and microwave power amplifiers[C]//Microwave Symposium Digest, 2002 IEEE MTT-S International. IEEE, 2002, 3: 1627-1630.

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