High Performance Enhancement-Mode Gate-Recessed Al

ZHANG Rong; MA Xiao-hua; LUO Wei-jun; LIU Hui; SUN Peng-peng; GENG Miao

Chinese

您当前的位置：

首页 >

文章列表页 >

High Performance Enhancement-Mode Gate-Recessed Al

更新时间：2026-09-04

- High Performance Enhancement-Mode Gate-Recessed Al
- Vol. 34, Issue 11, Pages: 94-98(2017)
- 作者机构：
  
  1. 西安电子科技大学先进材料与纳米科技学院,陕西,西安,710071
  2. 中国科学院机构微电子研究所,北京,100029
  3. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2017
- 稿件说明：
移动端阅览
张蓉, 马晓华, 罗卫军, 刘辉, 孙朋朋, 耿苗. 高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT[J]. 微电子学与计算机, 2017, 34(11): 94-98.

ZHANG Rong, MA Xiao-hua, LUO Wei-jun, et al. High Performance Enhancement-Mode Gate-Recessed Al[J]. 2017, 34(11): 94-98.
张蓉, 马晓华, 罗卫军, 刘辉, 孙朋朋, 耿苗. 高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT[J]. 微电子学与计算机, 2017, 34(11): 94-98. DOI：

ZHANG Rong, MA Xiao-hua, LUO Wei-jun, et al. High Performance Enhancement-Mode Gate-Recessed Al[J]. 2017, 34(11): 94-98. DOI：

摘要

在蓝宝石衬底上制备了栅长为0.25 m的增强型AlO/AlGaN/GaN MIS-HEMTs

采用刻蚀凹栅与ALD(原子层淀积)AlO介质层的方法研制器件.研制的增强型MIS-HEMT器件的阈值电压为+2.2 V

饱和电流为512.3 mA/mm.通过变频变温C-V方法测试提取的AlO介质层与AlGaN势垒层之间的界面态密度相应于能级范围(-0.35)eV~(-0.65)eV从8.50×10 cmeV减小到9.73×10 cmeV.另外

研制器件展示了突出的射频性能

其截止频率())为30.5 GHz

最高振荡频率()为71.5 GHz.连续波测试模式时

该器件在8 GHz频率下

饱和输出功率密度为1.7 W/mm

相应附加功率效率为32.6%.展现出凹栅增强型MIS-HEMT在X波段射频电路中的应用潜力.

Abstract

In this letter

enhancement-mode (E-mode) AlO/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with a gate-length (L) of 0.25 m are fabricated using gate recess and ALD-AlO process on a sapphire substrate. The fabricated E-mode MIS-HEMTs exhibit a threshold voltage of +2.2 V and a saturation drain current of 512.3 mA/mm at V=8 V. The interface trap state density (D) extracted by frequency/temperature-dependent capacitance-voltage (C-V) measurement between AlO and AlGaN decreases from 8.50×10 cmeV at the energy of (-0.35) eV to 9.73×10 cmeV at (-0.65) eV. In addition

the fabricated devices show excellent RF performance which consists of a cut-off frequency () of 30.5 GHz and a maximum oscillation frequency () of 71.5 GHz. Large-signal power measurements at 8 GHz reveal a maximum saturated output power density of 1.7 W/mm with a corresponding PAE of 32.6% in continuous-wave mode. These results showed the gate-recessed E-mode MIS-HEMTs are candidates for X-band applications.

关键词

Keywords

references

Yang S, Tang Z K, Wong K-Y et al. Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-Heterostructures using frequency- and temperature-dependent C-V techniques[C]//IEEE Int. Electron Devices Meeting, IEEE, 2013: 152.

Shinohara. K, Regan D, Corrion A et al. Deeply-scaled E/D-Mode GaN-HEMTs for sub-mm-Waveamplifiers and mixed-Signal applications[C]// IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012.

Feng Z H, Zhou R, Xie S Y et al. 18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma Ion implantation[J]. IEEE Electron Dev. Lett., 2010, 31(12): 1386. DOI: 1386

Mizue C, Hori Y J, Marcin M, et al. Capacitance-voltage characteristics of Al2O3/AlGaN/GaN structures and state density distribution at Al2O3/AlGaNinterface[J]. J. J. Appl. Phys, 2011, 50 (2) : 021001-021001-7. DOI: 021001

Yang S, Liu S H, Lu Y Y et al. AC-Capacitance techniques for interface trap analysis in GaN-Based Buried-Channel MIS-HEMTs[J]. IEEE Trans. Electron Dev. 2015, 62(6): 1870. DOI: 1870

Huang S, Liu X Y, Zhang J H, et al. High RF performance enhancement-mode Al2O3/AlGaN/GaN MIS-HEMTs fabricated with high-temperature gate-recess technique[J]. IEEE Electron Dev. Lett. 2015, 36(8): 754. DOI: 754

Yang S, Liu S H, Liu C et al. Thermally induced threshold voltage instability of Ⅲ-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes[C]//IEEE Int. Electron Devices Meeting. IEEE, 2014: 434.

Albrecht J D, Kane A, Chang T-H, DARPA's microscale power conversion program[C]// IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012.

Maroldt S, Haupt C, Pletschen W et al. Gate-Recessed AlGaN/GaN based Enhancement-Mode high electron mobility transistors for high frequency operation[J]. J. J. Appl. Phys., 2009, 48: 04C083-1. DOI: 04C083-1

Kuraguchi M, Takada Y, Suzuki T, et al. Normally-off GaN-MISFET with well-controlled threshold voltage[J]. Phys. Stat. Sol. (a), 2007, 204(6): 2010-2013. DOI: 2010

Mishra U K, Shen L, Kazior T E. GaN-Based RF power devices and amplifiers[J]. Proceedings of the IEEE, 2008, 96 (2) : 287-305. DOI: 287

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Lightweight countermeasures against Spectre attacks on the branch prediction unit

A review of large model development: technological evolution from BERT to Deepseek

Monte carlo analysis of V-layout trench SiC neutron detector

Aerial vehicle detection algorithm based on multi-scale fusion and small-object enhancement

Design of ultra-low power real-time clock circuits

Related Author

No data

Related Institution

No data

AI问答

Postal code：100079
Tel：（010）53879206 Email：tmw@bjxintong.com.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09082226号-64 京公网安备11010602201714号
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰