Study on the Characteristics of Graphene Field-Effect Transistors With Asymmetry Source and Drain

ZENG Rong-zhou; LI Ping; LIAO Yong-bo; ZHANG Qing-wei

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Study on the Characteristics of Graphene Field-Effect Transistors With Asymmetry Source and Drain

更新时间：2026-09-04

- Study on the Characteristics of Graphene Field-Effect Transistors With Asymmetry Source and Drain
- Vol. 35, Issue 2, Pages: 118-121(2018)
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室机构,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
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- Published：2018
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曾荣周, 李平, 廖永波, 张庆伟. 源漏不对称的石墨烯场效应管特性研究[J]. 微电子学与计算机, 2018, 35(2): 118-121.

ZENG Rong-zhou, LI Ping, LIAO Yong-bo, et al. Study on the Characteristics of Graphene Field-Effect Transistors With Asymmetry Source and Drain[J]. 2018, 35(2): 118-121.
曾荣周, 李平, 廖永波, 张庆伟. 源漏不对称的石墨烯场效应管特性研究[J]. 微电子学与计算机, 2018, 35(2): 118-121. DOI：

ZENG Rong-zhou, LI Ping, LIAO Yong-bo, et al. Study on the Characteristics of Graphene Field-Effect Transistors With Asymmetry Source and Drain[J]. 2018, 35(2): 118-121. DOI：

摘要

石墨烯场效应管(GFET)在栅极和源/漏电极之间存在的不对称的未被栅极覆盖的区域

会引起栅、源和栅、漏电极之间的串联电阻不相等

这将对GFET的性能会产生影响.首次测试了源漏不对称GFET在互换源、漏电极的情况下的输出特性、转移特性和跨导

并采用带源极负反馈电阻的共源极电路模型和石墨烯沟道总电阻计算公式

分析了源漏不对称对器件特性的影响机理.为研制GFET及其他的纳米结构材料晶体管提供了有益的参考.

Abstract

There are asymmetric un-gated regions that give rise to unequal assess resistances between the gate and the source/drain (S/D) electrodes in the graphene field effect transistor (GFET)

which has a certain effect on the performance to the GFET. For the first time

in this paper

when the source and drain electrodes exchanged

the output characteristics

transfer characteristics and transconductance of the asymmetric GFET are measured respectively. The influence mechanism resulting from the asymmetry Source and Drain is analyzed by using the common source circuit model with source negative feedback resistor and the total resistance equation of graphene channel. It provides a useful reference for preparation and testing of GFETs and other nanostructured material transistors.

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references

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