Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment

ZHENG Ran; LIU Chao; LIU Han; HUI Xiang-li

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Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment

更新时间：2026-09-04

- Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment
- Vol. 35, Issue 4, Pages: 144-148(2018)
- 作者机构：
  
  西北工业大学计算机学院,陕西,西安,710072
- 作者简介：
- 基金信息：
- DOI：
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- Published：2018
- 稿件说明：
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郑然, 刘超, 刘晗, 惠祥力. 辐射环境下CMOS图像传感器的暗电流幅值分布预测方法[J]. 微电子学与计算机, 2018, 35(4): 144-148.

ZHENG Ran, LIU Chao, LIU Han, et al. Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment[J]. 2018, 35(4): 144-148.
郑然, 刘超, 刘晗, 惠祥力. 辐射环境下CMOS图像传感器的暗电流幅值分布预测方法[J]. 微电子学与计算机, 2018, 35(4): 144-148. DOI：

ZHENG Ran, LIU Chao, LIU Han, et al. Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment[J]. 2018, 35(4): 144-148. DOI：

摘要

在空间卫星系统中

CMOS图像传感器也成为了首选的成像器件.然而

空间中存在的各种辐射粒子所引起的辐射效应

会使CMOS图像传感器暗电流均值增加、不一致性增强

导致图像信噪比降低

影响成像质量.基于半导体器件的辐射效应原理

分析了射线和质子辐射对CMOS图像传感器的总剂量和位移损伤效应

提出了一种混合辐射环境下暗电流分布建模方法.仿真结果表明

提出的方法能够准确预测射线和质子混合辐射环境下CMOS图像传感器的暗电流幅值分布情况.

Abstract

Nowadays

CMOS image sensors are more and more used in a wide variety of applications

especially in satellite systems

where they are exposed to space radiation environment. In-orbit sensors suffer from radiation induced dark-current degradation that the dark-current mean value and non-uniformity increase

which results in the signal-to-noise-ratio decrease affecting the image quality. Based on the principle of radiation effects on semiconductor devices

this paper analyzes the ionizing and displacement damage effects in CMOS image sensors due to -rays and protons radiation

and proposes a method for dark-current distribution modeling in the mixed radiation environment. Simulation results proves that the proposed method is well adapted to predict the dark-current distributions for a device which is exposed to both rays and protons radiation at the same time.

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references

Hopkinson G R, Dale C J, Marshall P W. Proton effectsin charge-coupled devices[J]. IEEE Transactions on Nuclear Science, 1996, 43(2): 614-627. DOI: 614

El Gamal A, Eltoukhy H. Cmos image sensors[J]. IEEE Circuits andDevices Magazine, 2005, 21(3): 6-20. DOI: 6

Goiffon V, Virmontois C, Magnan P, et al. Radiation damages in cmos image sensors: Testingand hardening challenges brought by deep sub-micrometer cis processes[C]//SPIE Remote Sens. IEEE, 2010.

Hopkinson G. Displacement damage analysis and characterization ofeffects on devices[C]//SpaceRadiation Environnement and its Effects on Spacecraft Components andSystems. Toulouse: Cepadues, 2004.

Hopkinson G R. Radiation-induced dark current increases in ccds[C]//Radiation and its Effects on Components and Systems, 1993. RADECS, 1993: 401-408.

Marshall P W, Dale C J, Burke E A, et al. Displacement damage extremes in silicon depletion regions[J]. IEEE Transactions on Nuclear Science, 1989, 36(6): 1831-1839. DOI: 1831

Srour J R, Marshall C J, Marshall P W. Review of displacementdamage effects in silicon devices[J]. IEEE Transactions on NuclearScience, 2003, 50(3): 653-670. DOI: 653

Srour J R, Hartmann R A, Kitazaki K S. Permanent damageproduced by single proton interactions in silicon devices[J]. IEEE Transactionson Nuclear Science, 1986, 33(6): 1597-1604. DOI: 1597

Gilard O, Boatella-Polo C, Dolado-Perez J C, et al. Corot satellite: Analysis of the in-orbitccd dark current degradation[J]. IEEE Transactions on Nuclear Science, 2010, 57(3): 1644-1653. DOI: 1644

Goiffon V, Virmontois C, Magnan P, et al. Identificationof radiation induced dark current sources in pinned photodiodecmos image sensors[J]. IEEE Transactions on Nuclear Science, 2012, 59(4): 918-926. DOI: 918

Hopkinson G R, Chlebek C. Proton damage effects in an eev ccdimager[J]. IEEE Transactions on Nuclear Science, 1989, 36(6): 1865-1871. DOI: 1865

Bogaerts J, Dierickx B, Meynants G, et al. Total dose anddisplacement damage effects in a radiation-hardened cmos aps[J]. IEEETransactions on Electron Devices, 2003, 50(1): 84-90. DOI: 84

Ziegler J F, Biersack J P, Littmark U. The stopping and rangeof ions in solids[C]//PC Version Developed. Yorktown, NY. Oxford, U.K. : Pergamon.

Beaumel M, Herve D, Aken D Van. Cobalt-60, proton andelectron irradiation of a radiation-hardened active pixel sensor[J]. IEEETransactions on Nuclear Science, 2010, 57(4): 2056-2065. DOI: 2056

Goiffon V, Estribeau M, Marcelot O, et al. Radiation effects in pinnedphotodiode cmos image sensors: Pixel performance degradation due tototal ionizing dose[J]. IEEE Transactions on Nuclear Science, 2012, 59(6): 2878-2887. DOI: 2878

Gilard O, Boutillier M, Quadri G, et al. New approach for the prediction of ccd dark current distribution in a space radiation environment[J]. IEEE Transactions on Nuclear Science, 2008, 55(6): 3626-3632. DOI: 3626

Virmontois C, Goiffon V, Magnan P, et al. Similarities between proton and neutroninduced dark current distribution in cmos image sensors[J]. IEEE Transactionson Nuclear Science, 2012, 59(4): 927-936. DOI: 927

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