Design of 25 Gbps Silicon MZ Electro-optic Modulator Driving Electrodes

JI Peng-fei; HE Wei-feng

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Design of 25 Gbps Silicon MZ Electro-optic Modulator Driving Electrodes

更新时间：2026-09-04

- Design of 25 Gbps Silicon MZ Electro-optic Modulator Driving Electrodes
- Vol. 35, Issue 8, Pages: 6-10(2018)
- 作者机构：
  
  上海交通大学微纳电子学系,上海,200240
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2018
- 稿件说明：
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纪鹏飞, 何卫锋. 一种25 Gbps硅基MZ电光调制器驱动电极的设计[J]. 微电子学与计算机, 2018, 35(8): 6-10.

JI Peng-fei, HE Wei-feng. Design of 25 Gbps Silicon MZ Electro-optic Modulator Driving Electrodes[J]. 2018, 35(8): 6-10.
纪鹏飞, 何卫锋. 一种25 Gbps硅基MZ电光调制器驱动电极的设计[J]. 微电子学与计算机, 2018, 35(8): 6-10. DOI：

JI Peng-fei, HE Wei-feng. Design of 25 Gbps Silicon MZ Electro-optic Modulator Driving Electrodes[J]. 2018, 35(8): 6-10. DOI：

摘要

为了满足高带宽、高密度的数据互联需求

本文基于IMEC的硅光子SOI工艺提出了一种紧凑型行波驱动电极的马赫-曾德(MZ)调制器结构.本文详细分析了设计高速行波电极需解决的问题

包括考虑阻抗匹配、微波损耗以及电光信号的速度匹配问题.设计实现了单通道MZ调制器电光调制3 dB带宽17 GHz

可支持25 Gbps的传输速率.同时为了应用于多通道高密度的电光集成互联中

优化了电极结构

使得MZ调制器面积节省25%.

Abstract

In order to meet the needs of high-bandwidth and high-density data interconnection

this paper proposes a compact Mach-Zehnder modulator structure based on IMECs Silicon Photonic SOI process. The paper analyzes the problems in the design of high speed traveling wave electrodes in detail

including RF loss and the matching of impedance and velocity. The electro-optical modulation 3 dB bandwidth is achieved 17 GHz

and can working at 25 Gbps data rate. At the same time

in order to be applied to multi-channel high-density electro-optic integrated interconnection

the electrode structure is optimized so that the area of the MZ modulator is saved by 25%.

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references

周林杰, 周砚扬, 陆梁军, 等.硅基马赫曾德电光调制设计优化与实现[J].中兴通讯技术, 2017, 23(5): 21-29.DOI:10.3969/j.issn.1009-6868.2017.05.005.

Yong Z, Shopov S, Mikkelsen J C, et al. Flip-chip integrated silicon Mach-Zehnder modulator with a 28 nm fully depleted silicon-on-insulator CMOS driver[J]. Optics Express, 2017, 25(6):6112-6121. DOI: 6112

Streshinsky M, Ding R, Liu Y, et al. Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm[J]. Optics Express, 2013, 21(25): 30350-30357. doi: 10.1364/OE.21.0 30350.

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Ding J, Chen H, Yang L, et al. Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration[J]. Optics Express, 2012, 20(3):3209-3218. DOI: 3209

Oxford city Giovanni Ghione. Semiconductor devices for high-speed optoelectronics[M]. Oxford city :Cambridge University Press, 2009.

Yong Z, Sacher W D, Huang Y, et al. Efficient single-drive push-pull silicon Mach-Zehnder modulators with U-shaped PN junctions for the O-band[J]. OSA Publishing, IEEE, 2017, 20(6):61-63. DOI: 61

Jing G, Hui W. Multi-function Mach-Zehnder modulator for pulse shaping and generation [J]. Optics Express, 2016, 24(19):222-239. DOI: 222

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