Gaynor B D, Hassoun S. Fin shape impact on finfet leakage with application to multithreshold and ultralow-leakage finfet design[J]. IEEE Transactions on Electron Devices, 2014, 61(8):2738-2744. DOI: 2738

Lin C L, Hsiao P H, Yeh W K, et al. Effects of fin width on device performance and reliability of double-gate n-type FinFETs[J].IEEE Transactions on Electron Devices, 2013, 60 (11) :3639-3644. DOI: 3639

张丹.65nm工艺下MOSFET的总剂量辐照效应及加固研究[D].西安: 西安电子科技大学, 2015.

Gaillardin M, Paillet P, Ferlet-Cavrois V, et al. Total ionizing dose effects on triple-gate FETs[J].IEEE Transactions on Nuclear Science, 2006, 53 (6) :3158-3165. DOI: 3158

Mrstik B J, Hughes H L, Lawrence R K, et al.Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques[J]. IEEE Transactions on Nuclear Science, 2002, 48(6):2107-2113. DOI: 2107

Fernández-Martínez P, Cortés I, Hidalgo S, et al.Simulation of total ionising dose in MOS capacitors[J].Electron Devices, 2011:1-4. DOI: 1

李念龙, 于奇, 王凯, 等. MOS结构γ总剂量效应仿真模型研究[J].微电子学, 2013, 43 (3) :445-448. DOI: 445

Skotnicki T, Hutchby J A, Tsu Jae K, et al. The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance[J].IEEE Circuits and Devices Magazine, 2015(25);16-26. DOI: 16

Chatterjee I, Zhang E X, Bhuva B L, et al.Bias dependence of total-dose effects in bulk FinFETs[J]. IEEE Transactions on Nuclear Science, 2013(60):4476-4482. DOI: 4476