Study on Reliability of A New Anti-fuse Device Based on ALD Al

ZHAO Wei-song; TIAN Min; ZHONG Hui-cai

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Study on Reliability of A New Anti-fuse Device Based on ALD Al

更新时间：2026-09-04

- Study on Reliability of A New Anti-fuse Device Based on ALD Al
- Vol. 36, Issue 1, Pages: 41-45(2019)
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2019
- 稿件说明：
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赵巍颂, 田敏, 钟汇才. 基于ALDAlO新型反熔丝器件的可靠性研究[J]. 微电子学与计算机, 2019, 36(1): 41-45.

ZHAO Wei-song, TIAN Min, ZHONG Hui-cai. Study on Reliability of A New Anti-fuse Device Based on ALD Al[J]. 2019, 36(1): 41-45.
赵巍颂, 田敏, 钟汇才. 基于ALDAlO新型反熔丝器件的可靠性研究[J]. 微电子学与计算机, 2019, 36(1): 41-45. DOI：

ZHAO Wei-song, TIAN Min, ZHONG Hui-cai. Study on Reliability of A New Anti-fuse Device Based on ALD Al[J]. 2019, 36(1): 41-45. DOI：

摘要

金属-绝缘体-金属(Metal-Insulator-Metal

MIM)反熔丝器件常被用于现场可编程逻辑阵列(Field Programmable Gate Array

FPGA)的互联结构单元.本文使用高介电常数材料AlO作为介质层

使用原子层沉积(Atomic Layer Deposition

ALD)技术

制备了高可靠性

高性能的MIM反熔丝单元.该反熔丝单元关态电阻超过1TΩ

同时开态电阻非常低

满足正态分布

集中在22 Ω左右

波动幅度很小

标准差仅为3.7 Ω

因此AlO反熔丝器件具有很高的开关比.本文研究了该器件编程前后两种状态的特性及时变击穿特性(Time Dependent Dielectric Breakdown

TDDB).研究结果表明

在2 V工作电压下

未编程的反熔丝单元的预测寿命为1591年

同时

当读电流在0~20 mA时

编程后的反熔丝保持稳定.这说明该反熔丝单元在低阻态和高阻态都具有非常高的可靠性.

Abstract

Metal-Insulator-Metal (MIM) antifuse has always been used in Field Programmable Gate Array (FPGA) interconnection structure unit. A High-performance and High-reliability Metal-Insulator-Metal antifuse was fabricated with high κAlO deposited by Atomic Layer Deposition (ALD) as the dielectric. The anti-fuse units off-state resistance exceeds 1TΩ

and the on-state resistance is very low

which satisfies the normal distribution

the on-resistance value is concentrated around 22Ω

and the standard deviation is only 3.7Ω

so it has high on/off ratio. In this paper

the Time Dependent DielectricBreakdown (TDDB) of the structure is studied. The results show that the predicted lifetime of the unprogrammed anti-fuse cell is 1591 years at 2V operating voltage. At the same time

when the read current is 0~20mA

the programmed anti-fuse remains stable. This shows that the antifuse has a very high reliability in both low-impedance and high-impedance states.

关键词

Keywords

references

Hamdy E, Mccollum J, Chen S O, et al. Dielectric based antifuse for logic and memory ICs[C]// Electron Devices Meeting, 1988. IEDM ′88. Technical Digest. International. San Francisco, IEEE, 1988: 786-789.

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Wong R J, Gordon K E. Reliability mechanism of the unprogrammed amorphous silicon antifuse[C]// Reliability Physics Symposium, 1994. IEEE International. San Jose, California, IEEE Xplore, 1994: 378-382.

Gonzalez M B, Rafi J M, Beldarrain O, et al. Charge trapping analysis of l2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant[J]. Journal of Vacuum Science % Technology B Nanotechnology % Microelectronics Materials Processing Measurement % Phenomena, 2012, 31(1):01A101. DOI: 01A101

Tian M, Zhong H, Li L, et al. A new high-κ Al2O3-based metal-insulator-metal antifuse[J]. Solid-State Electronics, 2018, 7(12): id.125327. DOI: id.125327

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