Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology

HU Jun; CHEN Xiao-juan

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Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology

更新时间：2026-09-04

- Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology
- Vol. 35, Issue 12, Pages: 59-63(2018)
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2018
- 稿件说明：
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胡俊, 陈晓娟. 基于GaAs工艺的超宽带混合集成功率放大器[J]. 微电子学与计算机, 2018, 35(12): 59-63.

HU Jun, CHEN Xiao-juan. Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology[J]. 2018, 35(12): 59-63.
胡俊, 陈晓娟. 基于GaAs工艺的超宽带混合集成功率放大器[J]. 微电子学与计算机, 2018, 35(12): 59-63. DOI：

HU Jun, CHEN Xiao-juan. Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology[J]. 2018, 35(12): 59-63. DOI：

摘要

基于0.15 μm GaAs PHEMT工艺

设计了一款可以应用于超高频(VHF)和甚高频(UHF)的超宽带功率放大器.该功放工作在AB类

由上下两条对称支路构成.输出电路采用T型结合成技术

在片外使用罗杰斯4350B高速印刷电路板(PCB)制作.最后在先进设计系统软件(ADS)里进行芯片和PCB板的联合仿真.仿真结果显示:此款功放的工作带宽是30 MHz~3 GHz

带宽超过6个倍频程.在整个频带内

小信号增益在21 dB±0.3 dB之间

输入输出回路损耗基本在-10 dB以下.连续波测量下

饱和输出功率在30.9 dBm±0.5 dB之间

功率附加效率(PAE)在17.7%~14.0%之间.

Abstract

An ultra-high bandwidth power amplifier (PA) was designed for very-high-frequency (VHF) and ultra-high frequency (UHF) applications based on 0.15 um GaAs PHEMT technology. The PA works in class AB

which consists of two symmetrical branches from top to bottom. The output circuit uses T-junction technology which uses the Rogers 4350B high-speed printed circuit board (PCB) in the off-chip. Finally

the chip and PCB have co-simulated in Advanced Design System (ADS). The simulation results show that the PA achieves an operating bandwidth of 30 MHz to 3 GHz whose bandwidth is more than 6 octaves. The small signal gain is over 21 dB±0.3 dB the whole bandwidth and the input and output return loss is generally less than -10 dB. Under continuous wave measurement

the saturated output power is 30.9 dBm±0.5 dB and the power added efficiency (PAE) is 17.7%-14.0%.

关键词

Keywords

references

Dabag H T, Hanafi B, Golcuk F, et al. Analysis and design of stacked-FET millimeter-wave power amplifiers[J]. IEEE Transactions on Microwave Theory % Techniques, 2013, 61(4):1543-1556. DOI: 1543

Ezzeddine A K, Huang H C. The high voltage/high power FET (HiVP)[C]// Radio Frequency Integrated Circuits. Tampa, Florida, USA, IEEE, 2003: 215-218.

Shifrin M, Ayasli Y, Katzin P. A new power amplifier topology with series biasing and power combining of transistors[C]// IEEE Microwave % Millimeter-wave Monolithic Circuits Symposium.[s.l]. IEEE Xplore, 1992: 39-41.

Peterson K E, Hung H L, Phelleps F R, et al. Monolithic high-voltage FET power amplifiers[C]// Microwave Symposium Digest, 1989. IEEE MTT-S International. Long-Beach, USA, IEEE, 1989(3): 945-948.

David M Pozar.微波工程[M].北京:电子工业出版社, 2006.

Ezzeddine A, Hung H L A, Huang H C. High-Voltage FET amplifiers for satellite and phased-array applications[J]. IEEE MTT-S International Microwave Symposium Digest, 1985, 85(1):336-339. DOI: 336

施晓楠, 陆伟成, 唐璞山, 等. CMOS多频带低噪声放大器设计[J].微电子学与计算机, 2008, 25(6):9-13. DOI: 9

冷永清. GaN高电子迁移率晶体管特性及其功率放大器研究[D].长沙: 湖南大学, 2013.

Wu H F, Cheng Q F, Li X G, et al. Analysis and design of an ultrabroadband stacked power amplifier in CMOS technology[J]. IEEE Transactions on Circuits % Systems Ⅱ Express Briefs, 2016, 63(1):49-53. DOI: 49

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