Design of a Single Event Effects Hardened RS Flip-Flops

WANG Jia; LI Ping; ZHENG Ran; WEI Xiao-min; HU Yong-cai

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Design of a Single Event Effects Hardened RS Flip-Flops

更新时间：2026-09-04

- Design of a Single Event Effects Hardened RS Flip-Flops
- Vol. 35, Issue 9, Pages: 55-58(2018)
- 作者机构：
  
  1. 西北工业大学计算机学院,陕西,西安,710072
  2. 斯特拉斯堡大学, 法国斯特拉斯堡,67037
- 作者简介：
- 基金信息：
- DOI：
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- Published：2018
- 稿件说明：
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王佳, 李萍, 郑然, 魏晓敏, 胡永才. 一种单粒子效应加固RS触发器电路设计[J]. 微电子学与计算机, 2018, 35(9): 55-58, 63.

WANG Jia, LI Ping, ZHENG Ran, et al. Design of a Single Event Effects Hardened RS Flip-Flops[J]. 2018, 35(9): 55-58.
王佳, 李萍, 郑然, 魏晓敏, 胡永才. 一种单粒子效应加固RS触发器电路设计[J]. 微电子学与计算机, 2018, 35(9): 55-58, 63. DOI：

WANG Jia, LI Ping, ZHENG Ran, et al. Design of a Single Event Effects Hardened RS Flip-Flops[J]. 2018, 35(9): 55-58. DOI：

摘要

提出了一种结构新颖的RS触发器电路结构.基于双互锁存储单元结构

实现了单粒子翻转加固.为进一步消除单粒子瞬态的影响

提出的电路采用了一个保护门电路和一个施密特触发器.该电路基于一种0.25m商用标准CMOS工艺进行了电路设计和版图物理实现.Spectre仿真结果表明提出的RS触发器对一个单粒子事件完全免疫

输出电压波形不受单粒子翻转和单子瞬态脉冲的影响.与三模冗余结构相比

在同等可靠性的情况下

该触发器面积减小27.8%

功耗降低43.1%.

Abstract

A novel RS flip-flop is proposed in order to degrade the influence of single event upset and single event transient. The proposed circuit can resist single event upset with the help of dual interlocked cell. Moreover

a guard gate and a Schmitt trigger are employed to be immune to single event transient. The proposed circuit is implemented in a 0.25 m commercial standard CMOS process. The Spectre simulation results demonstrate that the proposed circuit is immune to the single event upset and single event transient as only one single event happens. Compared with the triple modular redundancy providing same reliability

the die area and power dissipation of the proposed circuit are decreased by 27.8% and 43.1%

respectively.

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references

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苏霖, 王佳, 高武, 等.一种新颖的抗辐射加固SR锁存器设计[J].微电子学与计算机, 2017, 34(9): 136-140. DOI: 136

黄正峰, 彭小飞, 鲁迎春.基于C单元反馈回路的容SEU锁存器设计[J].微电子学, 2015, 45(2): 178-183. DOI: 178

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