Design and Optimization of 600V High Voltage Super-Junction VDMOS

WANG Rong-chao; WANG Li-xin; XING Xin-run; WANG Lin; LUO Jia-jun

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Design and Optimization of 600V High Voltage Super-Junction VDMOS

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- Design and Optimization of 600V High Voltage Super-Junction VDMOS
- Vol. 35, Issue 11, Pages: 67-72(2018)
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
  3. 中国科学院硅器件技术重点实验室,北京,100029
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2018
- 稿件说明：
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王荣超, 王立新, 邢心润, 王琳, 罗家俊. 一种600V高压超结VDMOS结构设计与优化[J]. 微电子学与计算机, 2018, 35(11): 67-72.

WANG Rong-chao, WANG Li-xin, XING Xin-run, et al. Design and Optimization of 600V High Voltage Super-Junction VDMOS[J]. 2018, 35(11): 67-72.
王荣超, 王立新, 邢心润, 王琳, 罗家俊. 一种600V高压超结VDMOS结构设计与优化[J]. 微电子学与计算机, 2018, 35(11): 67-72. DOI：

WANG Rong-chao, WANG Li-xin, XING Xin-run, et al. Design and Optimization of 600V High Voltage Super-Junction VDMOS[J]. 2018, 35(11): 67-72. DOI：

摘要

基于电荷补偿原理的超结VDMOS(Super-Junction VDMOS

SJVDMOS)器件

比传统的VDMOS具有更低的比导通电阻

更高的击穿电压.文中详细介绍了超结VDMOS元胞设计步骤

之后借助TCAD仿真对超结VDMOS的击穿电压和比导通电阻进行了深入优化

探究了电荷不平衡、漂移区厚度、衬底反向扩散以及表面结构等对击穿电压和比导通电阻的影响.对元胞结构的优化使得超结VDMOS由最初的击穿电压为587 V

比导通电阻为7.27 mΩ·cm

优化到最终的击穿电压为662.5V

比导通电阻为6.85mΩ·cm

性能得到明显改善.

Abstract

Based on the charge compensation principle

the super junction VDMOS (Super-Junction VDMOS

SJVDMOS) device has lower specific on-resistance and higher breakdown voltage than the traditional VDMOS. This paper introduces the super junction VDMOS cell design steps in detail. The TCAD is used to simulate the breakdown voltage and the specific on-resistance of super-junction VDMOS. The effects of charge imbalance

drift zone thickness

substrate back diffusion and surface structure on the breakdown voltage and specific on-resistance are investigated. The optimization of cell structure improves the performance of the super junction VDMOS obviously. The initial breakdown voltage improves from 587V to 662.5V

and the specific on-resistance declines from 7.27 mΩ·cm to 6.85 mΩ·cm.

关键词

Keywords

references

Kondekar P N, Parikh C D, Patil M B. Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS TM, using theory of novel voltage sustaining layer[C]// Power Electronics Specialists Conference, 2002. Pesc 02. 2002 IEEE. IEEE, 2002: 1769-1775.

Lorenz L, Deboy G, Knapp A, et al. COOLMOSTM-a new milestone in high voltage power MOS[J]. Proceedings of Ispsd, 1999:3-10. DOI: 3

Chen X B, Wang X, Sin J K O. A novel high-voltagesustaining structure with buried oppositely dopedregions[J]. IEEE Transactions on Electron Devices, 2000, 47(6):1280-1285. DOI: 1280

Chen X B, Sin J K O. Optimization of the specific on-resistance of the COOLMOS TM[J]. IEEE Trans Electron Devices, 2001, 48(2):344-348. DOI: 344

EDEN R. Power Semiconductor Forecast Report - 2016[M]. https://technology.ihs.com/580305/power-semiconductor-forecast-report-2016. 2016.

陈星弼.超结器件[J].电力电子技术, 2008, 42(12): 2-7. DOI: 2

黄海猛.超结器件的模型研究及优化设计[D].成都: 电子科技大学, 2013.

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