The Study and Design of the Stability of RF Power Amplifier

HAN Yue; CONG Mi-fang; LI Ke; DU Huan

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The Study and Design of the Stability of RF Power Amplifier

更新时间：2026-09-04

- The Study and Design of the Stability of RF Power Amplifier
- Vol. 35, Issue 10, Pages: 72-74(2018)
- 作者机构：
  
  1. 中国科学院机构微电子研究所新技术开发部,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2018
- 稿件说明：
移动端阅览
韩月, 丛密芳, 李科, 杜寰. 射频功率放大器稳定性的分析与设计[J]. 微电子学与计算机, 2018, 35(10): 72-74, 79.

HAN Yue, CONG Mi-fang, LI Ke, et al. The Study and Design of the Stability of RF Power Amplifier[J]. 2018, 35(10): 72-74.
韩月, 丛密芳, 李科, 杜寰. 射频功率放大器稳定性的分析与设计[J]. 微电子学与计算机, 2018, 35(10): 72-74, 79. DOI：

HAN Yue, CONG Mi-fang, LI Ke, et al. The Study and Design of the Stability of RF Power Amplifier[J]. 2018, 35(10): 72-74. DOI：

摘要

射频功率放大器的稳定性极大的影响了通信系统性能的可靠性

是通信系统中的重要组件.基于自主研发的RF-LDMOS器件

利用ADS软件设计了一款射频功率放大器

并研究了其稳定性.采用在栅极增加R-C并联电路的方法

改善功率放大器在100~200 MHz之间的稳定性.实验结果表明

R-C并联网络的阻抗在低于转折频率时为电阻型

高于转折频率时为电容型

因此在低频可以降低不需要的增益

而对工作频带内的增益和驻波性能没有明显影响.改善后的功率放大器在100~200 MHz频段增益达到17.4 dB以上

可稳定输出37.4 dBm以上功率.

Abstract

The RF Power Amplifier is an important component

whose stability can greatly affect the reliability of the communication system. Based on the self-designed RF-LDMOS device

a RF power amplifier was designed by ADS and its stability was studied. The R-C parallel circuit was added in the gate to improve the stability of the power amplifier in the 100MHz-200MHz band. Experience shows that the R-C parallel circuit performed as resistance when the frequency was under the transition frequency and performed as capacitance to the contrary. As a result

the R-C parallel circuit can effectively reduce the gain in low frequency with having no influence in the working frequency. The improved power amplifier has a stable gain of more than 17.4 dB in the 100 MHz-200 MHz band

and the output power of over 37.4 dBm.

关键词

Keywords

references

徐兴福.ADS2011射频电路设计与仿真实例[M].北京:电子工业出版社, 2014.

Reinhold Ludwig, Gene bogdanov. RF circuit design-theory and applications[M]. 2 nd ed. Beijing: Publishing House of Electronics Industry, 2013.

吕剑锋, 孙虹.射频功率放大器的稳定性分析[J].国外电子测量技术, 2005, 24(7):11-14. DOI: 11

王帅.RF-LDMOS器件研究和功率放大器设计[D].北京: 中国科学院微电子研究所, 2013.

Glenn Collinson, Marty Jones. A novel technique for measuring small signal S-parameters of an RF/microwave transistor, power amplifying stage for use in power amplifier stability analysis[J]. International Microwave Symposium Digest, 1993(3): 1255-1258. DOI: 1255

马立宪.LDMOS微波宽带功率放大器设计[D].安徽: 安徽大学, 2011.

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