Design of a Low Noise High PSR Low Dropout Regulator

HUANG Song; JIANG Hong-yu; LIU Zhi; GENG Zeng-jian

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Design of a Low Noise High PSR Low Dropout Regulator

更新时间：2026-09-04

- Design of a Low Noise High PSR Low Dropout Regulator
- Vol. 35, Issue 10, Pages: 89-92(2018)
- 作者机构：
  
  西安微电子技术研究所,陕西,西安,710054
- 作者简介：
- 基金信息：
- DOI：
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- Published：2018
- 稿件说明：
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黄松, 姜洪雨, 刘智, 耿增建. 一种低噪声高纹波抑制比的LDO设计[J]. 微电子学与计算机, 2018, 35(10): 89-92, 98.

HUANG Song, JIANG Hong-yu, LIU Zhi, et al. Design of a Low Noise High PSR Low Dropout Regulator[J]. 2018, 35(10): 89-92.
黄松, 姜洪雨, 刘智, 耿增建. 一种低噪声高纹波抑制比的LDO设计[J]. 微电子学与计算机, 2018, 35(10): 89-92, 98. DOI：

HUANG Song, JIANG Hong-yu, LIU Zhi, et al. Design of a Low Noise High PSR Low Dropout Regulator[J]. 2018, 35(10): 89-92. DOI：

摘要

提出了一种低噪声高电源纹波抑制比(PSR)的低压差线性稳压器(LDO).该低压差线性稳压器通过提高带隙基准和误差放大器的噪声抑制性能以及PSR性能以达到提高LDO性能的目的.在0.6 μm BiCMOS工艺下进行了流片验证

测试结果表明

当负载电流为100 mA时

100 Hz电源纹波抑制比为75 dB; 10 kHz时电源纹波抑制比为72 dB.输出噪声电压(100 Hz~100 KHz)为15 μV.

Abstract

A low dropout regulator (LDO) with low output noise voltage and high power supply ripple rejection ratio (PSR) is described. The LDO improves the ability of power supply ripple rejection and output noise voltage suppression by improving power supply ripple rejection ratio and output noise voltage suppression of the band-gap reference and the differential amplifier. This approach is tested in 0.6 μm BiCMOS process. The results show that the PSR at 100 Hz is 75 dB and at 10 kHz is 72 dB

when the load current is 100 mA. The output noise voltage is 15 μV (100 Hz to 100 kHz).

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references

Magod R, Suda N, Ivanov V, et al. A low-noise output capacitorless low-dropout regulator with a switched-RC bandgap reference[J]. IEEE Transactions on Power Electronics, 2017, 32 (4):2856-2864. DOI: 2856

王忆.高性能低压差线性稳压器研究与设计[D].杭州: 浙江大学, 2010.

Gupta V, Rincon M G. A 5mA 0.6um CMOS Miller Compensated LDO regulator with -27dB worst case power supply rejection using 60pF of on-chip capacitance[C]//ISSCC. San Fancisco, CA, USA: IEEE, 2007: 520-521.

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张龙, 来强涛, 刘生有等.一种全负载稳定的高PSRR LDO的设计[J].微电子学与计算机, 2017, 34(2):58-62. DOI: 58

阴亚东, 阎跃鹏.一种低噪声高电源抑制比CMOS低压差线性稳压器[J].固体电子学研究与进展, 2013, 33(6):571-577. DOI: 571

王建伟, 张启帆, 张先仁等.一种用于VCO供电的低噪声LDO[J].微电子学, 2015, 45(5):602-606. DOI: 602

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