Heat Generation Behavior of Silicon Layers in Ultra-thin SOI MOSFETs

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Heat Generation Behavior of Silicon Layers in Ultra-thin SOI MOSFETs

更新时间：2026-09-04

- Heat Generation Behavior of Silicon Layers in Ultra-thin SOI MOSFETs
- Vol. 35, Issue 5, Pages: 120-123(2018)
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- Published：2018
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超薄体SOI MOSFETs硅膜区热生成行为分析[J]. 微电子学与计算机, 2018, 35(5): 120-123.

Heat Generation Behavior of Silicon Layers in Ultra-thin SOI MOSFETs[J]. 2018, 35(5): 120-123.
超薄体SOI MOSFETs硅膜区热生成行为分析[J]. 微电子学与计算机, 2018, 35(5): 120-123. DOI：

Heat Generation Behavior of Silicon Layers in Ultra-thin SOI MOSFETs[J]. 2018, 35(5): 120-123. DOI：

摘要

针对SOI MOSFET自热效应热量的来源——热生成行为进行了深入研究

结果表明

对于静态电路

饱和导通电流产生的焦耳热效应是主要热量来源; 对于动态电路

开关电流引起的器件寄生电容充放电过程产生的开关热效应起主要作用.

Abstract

In this work

we investigated the source heat of self-heating in SOI MOSFETs

heat generation behavior

deeply.It shows that Joule heating effect caused by saturation current is the main source of heat in statistic circuits; while the switch heating effects from the parasitic capacitance charge and discharge process caused by switch current dominate in dynamic circuits.

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