Design of a Wideband Low Noise Amplifierat 5 GHz Band

WU Xiao-wen; CHEN Xiao-dong; LIU Yi

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Design of a Wideband Low Noise Amplifierat 5 GHz Band

更新时间：2026-09-04

- Design of a Wideband Low Noise Amplifierat 5 GHz Band
- Vol. 35, Issue 9, Pages: 95-98(2018)
- 作者机构：
  
  1. 中国科学院机构上海高等研究院,上海,201210
  2. 中国科学院大学机构,北京,101408
  3. 复旦大学,上海,200433
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2018
- 稿件说明：
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吴晓文, 陈晓东, 刘轶. 应用于5GHz频段的宽带低噪声放大器设计[J]. 微电子学与计算机, 2018, 35(9): 95-98.

WU Xiao-wen, CHEN Xiao-dong, LIU Yi. Design of a Wideband Low Noise Amplifierat 5 GHz Band[J]. 2018, 35(9): 95-98.
吴晓文, 陈晓东, 刘轶. 应用于5GHz频段的宽带低噪声放大器设计[J]. 微电子学与计算机, 2018, 35(9): 95-98. DOI：

WU Xiao-wen, CHEN Xiao-dong, LIU Yi. Design of a Wideband Low Noise Amplifierat 5 GHz Band[J]. 2018, 35(9): 95-98. DOI：

摘要

针对WLAN 802.11a/ax频段和未来第五代移动通信5 GHz以上应用

设计了一款5~6 GHz的低噪声放大器(LNA)

其工艺基于IBM 0.18 μm SiGeBiCMOS工艺.该设计采用共发射极的两级放大结构

第一级采用射极电感负反馈

第二级采用电压并联负反馈

有效优化了噪声系数和线性度.测试结果表明在5~6 GHz频率范围内

输入反射系数S和输出反射系数S分别小于-14.6 dB和-12.8 dB

正向增益S大于10.4 dB

噪声系数小于2.7 dB.在2.5 V工作电压下

功耗为15 mW.

Abstract

A low noise amplifier(LNA)for WLAN 802.11a/axstandard and 5th-Generation applicationscovering 5 to 6 GHz was designed based on IBM 0.18 μm SiGeBiCMOS process. The circuit adopted a two-stage and common emitter topology

the first stage used inductor feedback and the second stage used voltage shunt feedback which improvednoise figure and linearity. The proposed LNA had an input reflection coefficient and output reflection coefficient of -14.6 dB and -12.8 dB respectively from 5 to 6 GHz

the gain is 10.4 dB

and the noise figure is less than 2.7 dB. The proposed LNA consumed 15mW power at 2.5 V DC supply.

关键词

Keywords

references

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王巍, 宫召英, 杨铿, 等.3~5 GHz超宽带无电感CMOS低噪声放大器设计[J].微电子学与计算机, 2012, 29(6):130-133 DOI: 130

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方箭, 李景春, 黄标, 等. 5G频谱研究现状及展望[J].电信科学, 2015, 31(12):111-118. DOI: 111

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