Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling

SHANG Yu-ling; LI Wei-chao; TAN Min

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Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling

更新时间：2026-09-04

- Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling
- Vol. 35, Issue 11, Pages: 106-110(2018)
- 作者机构：
  
  桂林电子科技大学机构电子工程与自动化学院,广西,桂林,541004
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2018
- 稿件说明：
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尚玉玲, 李伟超, 谈敏. 基于电容耦合的TSV故障非接触测试方法研究[J]. 微电子学与计算机, 2018, 35(11): 106-110.

SHANG Yu-ling, LI Wei-chao, TAN Min. Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling[J]. 2018, 35(11): 106-110.
尚玉玲, 李伟超, 谈敏. 基于电容耦合的TSV故障非接触测试方法研究[J]. 微电子学与计算机, 2018, 35(11): 106-110. DOI：

SHANG Yu-ling, LI Wei-chao, TAN Min. Research on TSV Fault with Non-contact Testing Method Based on Capacitive Coupling[J]. 2018, 35(11): 106-110. DOI：

摘要

硅通孔(Through Silicon Via

TSV)故障严重降低了集成电路的性能和可靠性

因此对TSV的故障检测具有十分重要的意义.首先讨论了TSV的故障模型

并且利用Elmore延时模型分析了TSV开路故障对信号传输延时的影响

其次提出了一种基于电容耦合的TSV非接触测试电路

通过测量信号延时的变化来检测TSV开路故障

最后利用时间统计分析来预测故障电阻的大小。

Abstract

Through-silicon vias seriously degrade the performance and reliability of integrated circuits and are therefore of great importance for fault detection of TSVs. Firstly

the fault model of TSV is discussed

and the effect of open fault of TSV on signal transmission delay is analyzed by using Elmore delay model. A non-contact test circuit of TSV based on capacitive coupling is proposed to detect open fault of TSV by measuring the signal delay changes

and finally time statistical analysis framework is used to predict the size of the fault resistance.

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references

Monta?és R R, De Gyvez J P, Volf P. Resistance characterization for weak open de-fects[J].IEEE Design % Test of Computers, 2002, 19(5): 18-26. DOI: 18

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Katti G, Stucchi M, De Meyer K, et al. Ele-ctrical modeling and characterization of throu-gh silicon via for three-dimensional ICs[J]. IEEE Transactions on Electron Devices, 2010, 57(1): 256-262. DOI: 256

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Tayade R, Abraham J. Small-delay defect de-tection in the presence of process variations[J].Microelectronics Journal, 2008, 39(8): 1093-1100. DOI: 1093

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