An EFlash high voltage auto trim circuit

SUN Ming-yang; ZHENG Xiao; GUO Gui-liang

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An EFlash high voltage auto trim circuit

更新时间：2026-09-04

- An EFlash high voltage auto trim circuit
- Vol. 36, Issue 11, Pages: 1-6(2019)
- 作者机构：
  
  1. 中国科学院大学机构,北京,101408
  2. 中芯国际集成电路制造有限公司,上海,201203
  3. 中国科学院机构微电子研究所,北京,100029
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2019
- 稿件说明：
移动端阅览
孙铭阳, 郑晓, 郭桂良. 一种EFlash高压自校准电路[J]. 微电子学与计算机, 2019, 36(11): 1-6.

SUN Ming-yang, ZHENG Xiao, GUO Gui-liang. An EFlash high voltage auto trim circuit[J]. 2019, 36(11): 1-6.
孙铭阳, 郑晓, 郭桂良. 一种EFlash高压自校准电路[J]. 微电子学与计算机, 2019, 36(11): 1-6. DOI：

SUN Ming-yang, ZHENG Xiao, GUO Gui-liang. An EFlash high voltage auto trim circuit[J]. 2019, 36(11): 1-6. DOI：

摘要

嵌入式闪存(Embedded Flash

EFlash)内部高压的准确性对其读取、编程和擦除的有效性至关重要.为了EFlash IP的高压误差尽可能小

电路预留了可调接口用于调整内部高压的数值.通过提出自动检测的算法和设计集自动化检测和校准一体的自测电路

达到快速校准高压的目的.实验以一个2 M存储容量的EFlash为对象

实现校准时间从3 s到30 ms的减少.

Abstract

The accuracy of Embedded Flash (E; Flash) internal high voltage is crucial to its efficiency of reading

programming and erasing. In order to minimize the high voltage error of EFlash IP

the circuit reserved adjustable interface to adjust the value of internal high voltage. By putting forward the algorithm of automatic detection and designing the self-test circuit integrating automatic detection and calibration

the purpose of high voltage calibration can be achieved quickly. The experiment takes EFlash with a storage capacity of 2 M as the object to reduce the calibration time from 3 s to 30 ms.

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references

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