SANG Sheng-Nan, ZHANG Li-Jun, ZHENG Jian-Bin, et al. An Efficient Dynamic Fault Test Algorithm for FinFET Single Memory Cell[J]. 2019, 36(4): 17-22.DOI:
An Efficient Dynamic Fault Test Algorithm for FinFET Single Memory Cell
the new process also brings new defects. Synopsys found through fault modeling and testing that FinFET memory is more sensitive to dynamic faults than planar memory. The classic test algorithm is only for static faults. At present
there are few test algorithms for dynamic faults
and the complexity is very high. Therefore
an improved dynamic fault test algorithm is proposed in this paper. This algorithm can cover all single-cell dynamic faults in two successive sensitization operations.
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references
BOSIO A, DILILLO L, GIRARD P, et al.Advanced Test Methods for SRAMs [M].Springer US, 2010.
JOSEPH J, PATRIKAR R.Impact of Fin Width and Graded Channel Doping on the Performance of 22nm SOI FinFET[M]//VLSI Design and Test.Springer Berlin Heidelberg, 2013:153-159.
HARUTUNYAN G, VARDANIAN V A, ZORIAN Y.Minimal March Tests for Detection of Dynamic Faults in Random Access Memories [J].Journal of Electronic Testing, 2007, 23(1):55-74. DOI: 55
BENSO A, BOSIO A, CARLO S D, et al.Automatic March tests generation for static and dynamic faults in SRAMs[C]//Test Symposium, 2005.European.IEEE, 2005: 122-127.
HAMDIOUI S, GAYDADJIEV G N, GOOR A J V.A Fault Primitive Based Analysis of Dynamic Memory Faults[C]//IEEE 14 Annual Workshop on Circuits, Systems and Signal Processing.Veldhoven, Netherlands.IEEE, 2003: 84-89.
HARUTYUNYAN G, TSHAGHARYAN G, VARDANIAN V, et al.Fault modeling and test algorithm creation strategy for FinFET-based memories[C]//Vlsi Test Symposium.IEEE, 2014: 1-6.
HARTYUNYAN G, SHOUKOURIAN S, VARDANIAN V, et al.Extending fault periodicity table for testing faults in memories under 20nm[C]//IEEE East-West Design% Test Symposium.IEEE, 2015: 1-4.
MARINESCU M.Simple and Efficient Algorithms for Functional RAM Testing[C]//International Test Conference 1982, Philadelphia, Pa, USA.DBLP, 1982: 236-239.
DU L, ZHAO H, YANG W, et al.Optimization of STI oxide recess uniformity for FinFET beyond 20nm[C]// Semiconductor Technology International Conference.IEEE, 2015: 1-4.
HAMDIOUI S, Al-ARS Z, GOOR A J V D.Testing Static and Dynamic Faults in Random Access Memories[C]// IEEE Vlsi Test Symposium.IEEE Computer Society, 2002: 395.