a high accuracy and low power temperature sensor is proposed. By adopting high precision proportional current generation modules
vertical parasitic NPN bipolar transistors and improving output end structure
the noise of the circuit is suppressed and the temperature to voltage conversion accuracy is improved. Based on 55nm CMOS process
the circuit has been simulated with Spectre tool. The simulation results show that the sensitivity of the temperature sensor is 3.84 mV/℃ and the inaccuracy is 0.17℃ as the temperature differs from -55℃ to 85℃. The whole circuit dissipates 130μA. After the back-end physical implementation
the layout of the temperature sensor occupies an area of 325μm×64μm. Using STAR_RCXT to extract parasitic parameters from the layout and conduct post-simulation
the result indicates that the inaccuracy is 0.14℃/-0.24℃.
关键词
Keywords
references
SOURI K, SOURI K, MAKINAWA K. A 40 μW CMOS Temperature Sensor with an Inaccuracy of ±0.4℃(3σ) from -55℃ to 200℃[C]//Proceeding of the ESSCIRC.IEEE, 2013: 221-224.
SEBASTIANO F, BREEMS L J, MAKINAWA K A A, et al. A 1.2-V 10-μW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2℃(3σ) From -70℃ to 125℃[J].IEEE, Journal of Solid-State circuits, 2010, 45(12):2591-2601. DOI: 2591
Gang CHEN G, XUE X Y, DONG Q, et al. A Novel Low Power Wide Supply Voltage Range CMOS Temperature Sensor with -0.2/0.5℃ Error from -20℃ to 60℃[C]//International Conference on Solid-State and Integrated Circuit Technology. IEEE, 2012: 1-3.
XU L, HUIJSING J H, MAKINAWA K A A. A 12uW NPN-based Temperature Sensor With a 18.4pJ·K.2 FOM in 0.18um BCD CMOS[C]//International Workshop on Advances in Sensor and Interfaces. IEEE, 2017: 180-182.
张存鹏, 高精度温度传感器研究和设计[D].杭州: 浙江大学, 2014.
ZHAO C, WANG Y T, GENZER D, et al. A CMOS On-Chip Temperature Sensor with -0.21℃/0.17℃ Inaccuracy from -20℃ to 100℃[C]//International Symposium on Circuit and System. IEEE, 2013: 2621-2615.