中国电子科技集团公司第三十八研究所,安徽,合肥,230088
Published:2019
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胡孔阳, 胡海生, 刘小明. 三模冗余在高性能抗辐射DSP中的应用[J]. 微电子学与计算机, 2019, 36(3): 58-60.
HU Kong-yang, HU Hai-sheng, LIU Xiao-ming. The application of TMR on the high performance and anti radiation DSP[J]. 2019, 36(3): 58-60.
胡孔阳, 胡海生, 刘小明. 三模冗余在高性能抗辐射DSP中的应用[J]. 微电子学与计算机, 2019, 36(3): 58-60. DOI:
HU Kong-yang, HU Hai-sheng, LIU Xiao-ming. The application of TMR on the high performance and anti radiation DSP[J]. 2019, 36(3): 58-60. DOI:
单粒子翻转(SEU
single event upset)是当高能粒子击中半导体元器件时
引起逻辑发生"0""1"改变
进而导致逻辑错误的现象.在诸如外太空等电磁辐射恶劣的环境中
芯片常常会受到SEU的破坏
由于高性能的DSP规模较大
这种情况发生的概率会更高.针对SEU发生的原理
在抗辐射DSP结构上可以采取多种加固技术.本文基于国产高性能DSP"魂芯"的架构
从可测性和工程性的角度出发
提出了对片上SRAM存储器的加固方案.通过对SRAM采用自刷新和三模冗余技术
可以对SEU进行有效的抑制.
Single event upset is something when high energy particles hit the semiconductor device
it will cause the 10 transformation
and cause errors. In the harsh environment such as outer space
the chip will always be destroyed by SEU
the probability of this situation is higher since the larger scale of high performance of DSP. In view of SEU principle
anti radiation DSP will adopt a variety of reinforcement schemes. This article is based on the domestic high performance DSP HunXIn architecture
from the perspective of testability and engineering
puts forward the scheme of SRAM reinforcement on chip. Through the self-refresh and trip modular redundancy technology
SEU can be effectively suppressed.
陈楠, 魏廷存, 魏晓敏, 等.抗单粒子翻转效应的SRAM研究与设计[J].固体电子学与进展, 2013, 33 (10):491-496. DOI: 491
徐鑫龙.抗辐射SRAM测试系统的设计与实现[J].中国集成电路, 2016, 3(5):50-54. DOI: 50
王一奇赵发展, 刘梦新.基于RHBD技术的深亚微米抗辐SRAM电路的研究[J].半导体技术, 2012, 37(1):17-23. DOI: 17
赵又新.SRAM辐射效应测试装置的研制与应用[J].核电子学与探测技术, 2006, 26(4):414-417. DOI: 414
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