A stability design of the large current LDO based on the constant β PNP structure

WU Qi; SHAO Yuan-chao; WANG Yi-ting

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A stability design of the large current LDO based on the constant β PNP structure

更新时间：2026-09-04

- A stability design of the large current LDO based on the constant β PNP structure
- Vol. 36, Issue 8, Pages: 68-71(2019)
- 作者机构：
  
  西安微电子技术研究所,陕西,西安,710054
- 作者简介：
- 基金信息：
- DOI：
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- Published：2019
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武琪, 邵元超, 王漪婷. 一种基于恒β PNP结构的大电流LDO稳定性设计[J]. 微电子学与计算机, 2019, 36(8): 68-71.

WU Qi, SHAO Yuan-chao, WANG Yi-ting. A stability design of the large current LDO based on the constant β PNP structure[J]. 2019, 36(8): 68-71.
武琪, 邵元超, 王漪婷. 一种基于恒β PNP结构的大电流LDO稳定性设计[J]. 微电子学与计算机, 2019, 36(8): 68-71. DOI：

WU Qi, SHAO Yuan-chao, WANG Yi-ting. A stability design of the large current LDO based on the constant β PNP structure[J]. 2019, 36(8): 68-71. DOI：

摘要

本文在分析了传统LDO补偿方式的基础上

介绍了一种基于恒β PNP结构的适用于大电流、双极性LDO的稳定性设计技术.该结构有效地克服了传统的靠增大输出电容而牺牲瞬态性能和ESR补偿方式对输出电容要求苛刻的缺点.采用该结构设计的LDO采用3 μm 18V双极工艺进行了流片验证

效果显著.

Abstract

Based on the analysis of the traditional LDO compensation methods

this paper introduces a stability structure based on constant β PNP structure. It is suitable for high current and bipolar LDO.This structure effectively overcomes the drawbacks of relying on increasing the output capacitance while sacrificing transient performance and the harsh demand for output capacitance of ESR compensation method.The LDO adopting the structure is verified by 3 μm 18V bipolar process

and the effect is remarkable.

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references

G.A. Rincon-Mora.LDO模拟集成电路设计[M].(谭旻).北京: 科学出版社, 2012.

拉扎维著, .陈贵灿等译.模拟集成电路设计[M].西安: 西安交通大学出版社, 2002.

K. N. Leung, P K. T. Mok, W. H Ki etc. Three-Stage Large Capacitive Load Amplifier with Damping-Factor-Control Frequency Compensation[J]. IEEE Transations on Solid-State Circuits, 35(2): 221-230.

PE Allen著, 冯军等译. CMOS模拟集成电路设计[M].第二版.北京: 电子工业出版社, 2005.

Kwok K C, Mok P K T. Pole-zero tracking frequency compensation for low dropout regulator[C]// Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on. IEEE, 2002: IV-735-IV-738 vol.4

King B M. Understanding the load-transient response of LDOs[J]. Texas Instruments Incorporated. Analog Applications Journal, 2000: 19-23. DOI: 19

Instruments T. ESR, stability, and the LDO regulator[J]. Texas Instruments Inc., SLVA115, Dallas, TX, USA, 2002.

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